JPS55107335A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPS55107335A
JPS55107335A JP1341279A JP1341279A JPS55107335A JP S55107335 A JPS55107335 A JP S55107335A JP 1341279 A JP1341279 A JP 1341279A JP 1341279 A JP1341279 A JP 1341279A JP S55107335 A JPS55107335 A JP S55107335A
Authority
JP
Japan
Prior art keywords
circuit
drain
constitution
electrode
source electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1341279A
Other languages
Japanese (ja)
Inventor
Kenji Matsuo
Yasoji Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP1341279A priority Critical patent/JPS55107335A/en
Priority to US06/116,556 priority patent/US4389582A/en
Publication of JPS55107335A publication Critical patent/JPS55107335A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/01—Modifications for accelerating switching
    • H03K19/017—Modifications for accelerating switching in field-effect transistor circuits
    • H03K19/01728—Modifications for accelerating switching in field-effect transistor circuits in synchronous circuits, i.e. by using clock signals
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/096—Synchronous circuits, i.e. using clock signals
    • H03K19/0963—Synchronous circuits, i.e. using clock signals using transistors of complementary type

Abstract

PURPOSE:To improve the leading characteristics and to make high speed the IC circuit, by connecting the drain or source electrode of composite gate construction transistor Tr to another electrode of a pair of parallel circuit in common connection with conductor. CONSTITUTION:In the AND/NOR circuit 11 of IC circuit constitution consisting of P and N channel type transistors Tr1 to 10, the source or drain electrode of parallel pairs Tr7, 8 and Tr9, 10 formed with common drain or source electrode with composite gate construction is connected with resistors r1 and r2. With this constitution, the voltage of the drain electrode can always be kept small to the source electrode voltage Vb1 of Tr7, and the charging current from Tr8 to the output capacitance is not leaked to Tr7. Further, the charging of the charge to the output capacity can be made two Tr7, 8 and the mutual conductance of the both Tr is contributed to the leading of current, to obtain high speed switching circuit.
JP1341279A 1979-02-09 1979-02-09 Semiconductor integrated circuit Pending JPS55107335A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP1341279A JPS55107335A (en) 1979-02-09 1979-02-09 Semiconductor integrated circuit
US06/116,556 US4389582A (en) 1979-02-09 1980-01-29 MOS Integrated logic circuit device with improved switching speed characteristics

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1341279A JPS55107335A (en) 1979-02-09 1979-02-09 Semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
JPS55107335A true JPS55107335A (en) 1980-08-18

Family

ID=11832412

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1341279A Pending JPS55107335A (en) 1979-02-09 1979-02-09 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS55107335A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4946876A (en) * 1972-09-11 1974-05-07
JPS5378185A (en) * 1976-12-22 1978-07-11 Fujitsu Ltd Integrated circuit logical element

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4946876A (en) * 1972-09-11 1974-05-07
JPS5378185A (en) * 1976-12-22 1978-07-11 Fujitsu Ltd Integrated circuit logical element

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