JPS55105360A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPS55105360A
JPS55105360A JP1352879A JP1352879A JPS55105360A JP S55105360 A JPS55105360 A JP S55105360A JP 1352879 A JP1352879 A JP 1352879A JP 1352879 A JP1352879 A JP 1352879A JP S55105360 A JPS55105360 A JP S55105360A
Authority
JP
Japan
Prior art keywords
layer
sit
sdd3
injector
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1352879A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6232624B2 (enrdf_load_stackoverflow
Inventor
Junichi Nishizawa
Tadahiro Omi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Research Foundation
Original Assignee
Semiconductor Research Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Research Foundation filed Critical Semiconductor Research Foundation
Priority to JP1352879A priority Critical patent/JPS55105360A/ja
Publication of JPS55105360A publication Critical patent/JPS55105360A/ja
Publication of JPS6232624B2 publication Critical patent/JPS6232624B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/211—Design considerations for internal polarisation
    • H10D89/213—Design considerations for internal polarisation in field-effect devices
    • H10D89/217—Design considerations for internal polarisation in field-effect devices comprising arrangements for charge injection in static induction transistor logic [SITL] devices

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP1352879A 1979-02-08 1979-02-08 Semiconductor integrated circuit Granted JPS55105360A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1352879A JPS55105360A (en) 1979-02-08 1979-02-08 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1352879A JPS55105360A (en) 1979-02-08 1979-02-08 Semiconductor integrated circuit

Publications (2)

Publication Number Publication Date
JPS55105360A true JPS55105360A (en) 1980-08-12
JPS6232624B2 JPS6232624B2 (enrdf_load_stackoverflow) 1987-07-15

Family

ID=11835648

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1352879A Granted JPS55105360A (en) 1979-02-08 1979-02-08 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS55105360A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006190807A (ja) * 2005-01-06 2006-07-20 Hitachi Ltd シリコンカーバイド静電誘導トランジスタ

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0279021U (enrdf_load_stackoverflow) * 1988-12-05 1990-06-18
JPH0794993A (ja) * 1993-09-25 1995-04-07 Nec Corp ノイズ吸収装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006190807A (ja) * 2005-01-06 2006-07-20 Hitachi Ltd シリコンカーバイド静電誘導トランジスタ

Also Published As

Publication number Publication date
JPS6232624B2 (enrdf_load_stackoverflow) 1987-07-15

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