JPS55165687A - Charge transfer device - Google Patents

Charge transfer device

Info

Publication number
JPS55165687A
JPS55165687A JP7390279A JP7390279A JPS55165687A JP S55165687 A JPS55165687 A JP S55165687A JP 7390279 A JP7390279 A JP 7390279A JP 7390279 A JP7390279 A JP 7390279A JP S55165687 A JPS55165687 A JP S55165687A
Authority
JP
Japan
Prior art keywords
voltage
film
electrodes
electrode
apertures
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7390279A
Other languages
Japanese (ja)
Inventor
Yoshihiro Miyamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP7390279A priority Critical patent/JPS55165687A/en
Publication of JPS55165687A publication Critical patent/JPS55165687A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To make the depth of each well correspond to the quantity of stored charge by a method wherein when the transferring electrodes are provided on the surface of a semiconductor substrate through an insulating film and voltage is applied to them to transfer the charge, the further the electrode position is backward in the transfer direction, the higher the voltage level is applied to it. CONSTITUTION:The insulating film 102 is provided on the P-type semiconductor substrate 101, apertures are made at both end parts of the film, and the input and output diodes 4, 2 are formed by the diffusion method. Also plural transferring electrodes G1-G6 are mounted on the film 102 that is located between both apertures 4, 2, the input and output gate electrodes GIN, G0 are provided to both end parts of said film 102 to make up the time delay integration type CCD element 30. In this configuration, when a driving voltage is applied to the respective electrodes G1-G6, a higher voltage is applied to the electrode the further the electrode is located backward in the transfer direction by means of the shift resistor 10 and the driver 60. The driver 60 is composed of the voltage divider circuit, in which the resistances 91-97 are connected to each other in series, and N channel enhancement type switching and depletion type loading MOS transistors Q11-Q16 and Q21-Q26.
JP7390279A 1979-06-11 1979-06-11 Charge transfer device Pending JPS55165687A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7390279A JPS55165687A (en) 1979-06-11 1979-06-11 Charge transfer device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7390279A JPS55165687A (en) 1979-06-11 1979-06-11 Charge transfer device

Publications (1)

Publication Number Publication Date
JPS55165687A true JPS55165687A (en) 1980-12-24

Family

ID=13531580

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7390279A Pending JPS55165687A (en) 1979-06-11 1979-06-11 Charge transfer device

Country Status (1)

Country Link
JP (1) JPS55165687A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001063676A1 (en) * 2000-02-24 2001-08-30 Koninklijke Philips Electronics N.V. Charge-coupled device as well as a solid-state image pick-up device comprising a charge-coupled device
WO2004095581A1 (en) * 2003-04-23 2004-11-04 Hamamatsu Photonics K.K. Solid-state imaging device
WO2005036648A1 (en) * 2003-10-07 2005-04-21 Hamamatsu Photonics K.K. Energy line detecting element

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001063676A1 (en) * 2000-02-24 2001-08-30 Koninklijke Philips Electronics N.V. Charge-coupled device as well as a solid-state image pick-up device comprising a charge-coupled device
WO2004095581A1 (en) * 2003-04-23 2004-11-04 Hamamatsu Photonics K.K. Solid-state imaging device
EP1619723A1 (en) * 2003-04-23 2006-01-25 Hamamatsu Photonics K. K. Solid-state imaging device
EP1619723A4 (en) * 2003-04-23 2006-03-08 Hamamatsu Photonics Kk Solid-state imaging device
US7589775B2 (en) 2003-04-23 2009-09-15 Hamamatsu Photonics K.K. Solid-state imaging device
WO2005036648A1 (en) * 2003-10-07 2005-04-21 Hamamatsu Photonics K.K. Energy line detecting element
US7514687B2 (en) 2003-10-07 2009-04-07 Hamamatsu Photonics K.K. Energy ray detecting element

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