JPS55103773A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS55103773A
JPS55103773A JP1209479A JP1209479A JPS55103773A JP S55103773 A JPS55103773 A JP S55103773A JP 1209479 A JP1209479 A JP 1209479A JP 1209479 A JP1209479 A JP 1209479A JP S55103773 A JPS55103773 A JP S55103773A
Authority
JP
Japan
Prior art keywords
type
impurity concentration
layer
semiconductor substrate
diffused layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1209479A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6333306B2 (enrdf_load_stackoverflow
Inventor
Giichi Shimizu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP1209479A priority Critical patent/JPS55103773A/ja
Publication of JPS55103773A publication Critical patent/JPS55103773A/ja
Publication of JPS6333306B2 publication Critical patent/JPS6333306B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
JP1209479A 1979-02-05 1979-02-05 Semiconductor device Granted JPS55103773A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1209479A JPS55103773A (en) 1979-02-05 1979-02-05 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1209479A JPS55103773A (en) 1979-02-05 1979-02-05 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS55103773A true JPS55103773A (en) 1980-08-08
JPS6333306B2 JPS6333306B2 (enrdf_load_stackoverflow) 1988-07-05

Family

ID=11795979

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1209479A Granted JPS55103773A (en) 1979-02-05 1979-02-05 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS55103773A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63184359A (ja) * 1987-01-27 1988-07-29 Toshiba Corp 半導体装置の入力保護回路
US5986327A (en) * 1989-11-15 1999-11-16 Kabushiki Kaisha Toshiba Bipolar type diode

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4829380A (enrdf_load_stackoverflow) * 1971-08-18 1973-04-18

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4829380A (enrdf_load_stackoverflow) * 1971-08-18 1973-04-18

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63184359A (ja) * 1987-01-27 1988-07-29 Toshiba Corp 半導体装置の入力保護回路
US5986327A (en) * 1989-11-15 1999-11-16 Kabushiki Kaisha Toshiba Bipolar type diode

Also Published As

Publication number Publication date
JPS6333306B2 (enrdf_load_stackoverflow) 1988-07-05

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