JPS55102237A - Method and apparatus for plasma processing - Google Patents

Method and apparatus for plasma processing

Info

Publication number
JPS55102237A
JPS55102237A JP925679A JP925679A JPS55102237A JP S55102237 A JPS55102237 A JP S55102237A JP 925679 A JP925679 A JP 925679A JP 925679 A JP925679 A JP 925679A JP S55102237 A JPS55102237 A JP S55102237A
Authority
JP
Japan
Prior art keywords
plasma
collector
deposited
shape
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP925679A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6235265B2 (enrdf_load_stackoverflow
Inventor
Takashi Tsuchimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP925679A priority Critical patent/JPS55102237A/ja
Publication of JPS55102237A publication Critical patent/JPS55102237A/ja
Publication of JPS6235265B2 publication Critical patent/JPS6235265B2/ja
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
JP925679A 1979-01-31 1979-01-31 Method and apparatus for plasma processing Granted JPS55102237A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP925679A JPS55102237A (en) 1979-01-31 1979-01-31 Method and apparatus for plasma processing

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP925679A JPS55102237A (en) 1979-01-31 1979-01-31 Method and apparatus for plasma processing

Publications (2)

Publication Number Publication Date
JPS55102237A true JPS55102237A (en) 1980-08-05
JPS6235265B2 JPS6235265B2 (enrdf_load_stackoverflow) 1987-07-31

Family

ID=11715330

Family Applications (1)

Application Number Title Priority Date Filing Date
JP925679A Granted JPS55102237A (en) 1979-01-31 1979-01-31 Method and apparatus for plasma processing

Country Status (1)

Country Link
JP (1) JPS55102237A (enrdf_load_stackoverflow)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6122628A (ja) * 1984-07-11 1986-01-31 Hitachi Ltd ドライエツチング装置
JPS61135126A (ja) * 1984-12-06 1986-06-23 Hitachi Ltd プラズマ処理装置
JPS61281519A (ja) * 1985-06-07 1986-12-11 Matsushita Electric Ind Co Ltd 非晶質シリコン膜の形成方法
EP0727508A1 (de) * 1995-02-16 1996-08-21 Fraunhofer-Gesellschaft Zur Förderung Der Angewandten Forschung E.V. Verfahren und Vorrichtung zur Behandlung von Substratoberflächen
EP1905867A1 (en) 2006-09-28 2008-04-02 Fujifilm Corporation Process for forming a film, piezoelectric film, and piezoelectric device
JP2009510749A (ja) * 2005-09-30 2009-03-12 インターナショナル・ビジネス・マシーンズ・コーポレーション 保護光学コーティングを有する液浸光リソグラフィ・システム及び該システムの光学素子を形成する方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6122628A (ja) * 1984-07-11 1986-01-31 Hitachi Ltd ドライエツチング装置
JPS61135126A (ja) * 1984-12-06 1986-06-23 Hitachi Ltd プラズマ処理装置
JPS61281519A (ja) * 1985-06-07 1986-12-11 Matsushita Electric Ind Co Ltd 非晶質シリコン膜の形成方法
EP0727508A1 (de) * 1995-02-16 1996-08-21 Fraunhofer-Gesellschaft Zur Förderung Der Angewandten Forschung E.V. Verfahren und Vorrichtung zur Behandlung von Substratoberflächen
JP2009510749A (ja) * 2005-09-30 2009-03-12 インターナショナル・ビジネス・マシーンズ・コーポレーション 保護光学コーティングを有する液浸光リソグラフィ・システム及び該システムの光学素子を形成する方法
EP1905867A1 (en) 2006-09-28 2008-04-02 Fujifilm Corporation Process for forming a film, piezoelectric film, and piezoelectric device

Also Published As

Publication number Publication date
JPS6235265B2 (enrdf_load_stackoverflow) 1987-07-31

Similar Documents

Publication Publication Date Title
JPS52140267A (en) Vapor epitaxial crystal growing device
PH18523A (en) Phto-assisted cvd
TW331652B (en) Thin film vapor deposition apparatus
GB2085422B (en) Process and apparatus for chemical vapor deposition of films on silicon wafers
JPS56145198A (en) Forming method of single crystal silicon membrane and device therefor
JPS5419662A (en) Forming method of plasma cvd film
SE8902391D0 (sv) Foerfarande jaemte anordning foer att behandla kiselplattor
JPS5748226A (en) Plasma processing method and device for the same
JPS55102237A (en) Method and apparatus for plasma processing
JPS5358490A (en) Forming method for film
JPS5391665A (en) Plasma cvd device
JPS57155365A (en) Method of forming silicon carbide film excellent in adhesion on metal substrate surface
JPS5698820A (en) Preparation of amorphous semiconductor film
JPS57200569A (en) Apparatus for treating surface with gas decomposed by light
JPS57160911A (en) Manufacture of amorphous silicon film
JPS5575945A (en) Optical fiber coating method
JPS5298475A (en) Plasma treating apparatus
JPS53126867A (en) Cvd apparatus
JPS6410622A (en) Method of growing amorphous substance
JPS56169116A (en) Manufacture of amorphous silicon film
JPS556410A (en) Plasma gas phase reactor
JPS5471577A (en) Production of semiconductor device
JPS57187935A (en) Forming of fine crystalline amorphous silicon film
JPS5778941A (en) Method and apparatus for plasma deposition
JPS56138916A (en) Formation of amorphous thin film