JPS5494883A - Testing method of semiconductor device - Google Patents
Testing method of semiconductor deviceInfo
- Publication number
- JPS5494883A JPS5494883A JP215078A JP215078A JPS5494883A JP S5494883 A JPS5494883 A JP S5494883A JP 215078 A JP215078 A JP 215078A JP 215078 A JP215078 A JP 215078A JP S5494883 A JPS5494883 A JP S5494883A
- Authority
- JP
- Japan
- Prior art keywords
- upper electrode
- electrode connection
- time
- response time
- heat response
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Testing Of Individual Semiconductor Devices (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
PURPOSE: To enable testing of the upper electrode connection system of a semiconductor device to be performed with good accuracy in a short time by supplying high current pulses of a time width shorter than heat response time for a repetitive time sufficiently longer than the heat response time.
CONSTITUTION: Owing to the high current pulses (peak value I1M) having beforehand been set at above rated current, the temperature TP of a pellet 2 instantaneously increases considerably and with an increase in the temperatures of the pellet and electrode, shearing stress acts upon the upper and lower electrode connection systems on account of differences in the coefficients of thermal expansion. The upper electrode system becomes higher in temperature than the lower electrode system and the shearing stress on the upper electrode connection system is higher than that on the lower electrode connection system. In the upper electrode system, solder 4 rapidly deteriorates because the considerably high temperature state is repeated. As a result, supplying of the high current pulses of a time width shorter than the heat response time for the repetitive time sufficiently longer than the heat response time enables testing of the upper electrode connection system of the semiconductor device to be performed with good accuracy.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP215078A JPS5494883A (en) | 1978-01-11 | 1978-01-11 | Testing method of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP215078A JPS5494883A (en) | 1978-01-11 | 1978-01-11 | Testing method of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5494883A true JPS5494883A (en) | 1979-07-26 |
JPS6136187B2 JPS6136187B2 (en) | 1986-08-16 |
Family
ID=11521317
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP215078A Granted JPS5494883A (en) | 1978-01-11 | 1978-01-11 | Testing method of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5494883A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57161561A (en) * | 1981-03-31 | 1982-10-05 | Nec Corp | Testing method for semiconductor device |
JPS6363979A (en) * | 1986-09-04 | 1988-03-22 | Hitachi Ltd | Method for aging semiconductor parts |
US4811242A (en) * | 1986-04-25 | 1989-03-07 | Mitsubishi Denki Kabushiki Kaisha | Chinese character printer controlling device |
GB2568427A (en) * | 2016-08-23 | 2019-05-15 | Jiang Weiguo | Energy-saving solar panel |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50105075A (en) * | 1974-01-23 | 1975-08-19 |
-
1978
- 1978-01-11 JP JP215078A patent/JPS5494883A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50105075A (en) * | 1974-01-23 | 1975-08-19 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57161561A (en) * | 1981-03-31 | 1982-10-05 | Nec Corp | Testing method for semiconductor device |
US4811242A (en) * | 1986-04-25 | 1989-03-07 | Mitsubishi Denki Kabushiki Kaisha | Chinese character printer controlling device |
JPS6363979A (en) * | 1986-09-04 | 1988-03-22 | Hitachi Ltd | Method for aging semiconductor parts |
GB2568427A (en) * | 2016-08-23 | 2019-05-15 | Jiang Weiguo | Energy-saving solar panel |
Also Published As
Publication number | Publication date |
---|---|
JPS6136187B2 (en) | 1986-08-16 |
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