JPS5494883A - Testing method of semiconductor device - Google Patents

Testing method of semiconductor device

Info

Publication number
JPS5494883A
JPS5494883A JP215078A JP215078A JPS5494883A JP S5494883 A JPS5494883 A JP S5494883A JP 215078 A JP215078 A JP 215078A JP 215078 A JP215078 A JP 215078A JP S5494883 A JPS5494883 A JP S5494883A
Authority
JP
Japan
Prior art keywords
upper electrode
electrode connection
time
response time
heat response
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP215078A
Other languages
Japanese (ja)
Other versions
JPS6136187B2 (en
Inventor
Yukito Ikeda
Hitoshi Goto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP215078A priority Critical patent/JPS5494883A/en
Publication of JPS5494883A publication Critical patent/JPS5494883A/en
Publication of JPS6136187B2 publication Critical patent/JPS6136187B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Testing Of Individual Semiconductor Devices (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE: To enable testing of the upper electrode connection system of a semiconductor device to be performed with good accuracy in a short time by supplying high current pulses of a time width shorter than heat response time for a repetitive time sufficiently longer than the heat response time.
CONSTITUTION: Owing to the high current pulses (peak value I1M) having beforehand been set at above rated current, the temperature TP of a pellet 2 instantaneously increases considerably and with an increase in the temperatures of the pellet and electrode, shearing stress acts upon the upper and lower electrode connection systems on account of differences in the coefficients of thermal expansion. The upper electrode system becomes higher in temperature than the lower electrode system and the shearing stress on the upper electrode connection system is higher than that on the lower electrode connection system. In the upper electrode system, solder 4 rapidly deteriorates because the considerably high temperature state is repeated. As a result, supplying of the high current pulses of a time width shorter than the heat response time for the repetitive time sufficiently longer than the heat response time enables testing of the upper electrode connection system of the semiconductor device to be performed with good accuracy.
COPYRIGHT: (C)1979,JPO&Japio
JP215078A 1978-01-11 1978-01-11 Testing method of semiconductor device Granted JPS5494883A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP215078A JPS5494883A (en) 1978-01-11 1978-01-11 Testing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP215078A JPS5494883A (en) 1978-01-11 1978-01-11 Testing method of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5494883A true JPS5494883A (en) 1979-07-26
JPS6136187B2 JPS6136187B2 (en) 1986-08-16

Family

ID=11521317

Family Applications (1)

Application Number Title Priority Date Filing Date
JP215078A Granted JPS5494883A (en) 1978-01-11 1978-01-11 Testing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5494883A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57161561A (en) * 1981-03-31 1982-10-05 Nec Corp Testing method for semiconductor device
JPS6363979A (en) * 1986-09-04 1988-03-22 Hitachi Ltd Method for aging semiconductor parts
US4811242A (en) * 1986-04-25 1989-03-07 Mitsubishi Denki Kabushiki Kaisha Chinese character printer controlling device
GB2568427A (en) * 2016-08-23 2019-05-15 Jiang Weiguo Energy-saving solar panel

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50105075A (en) * 1974-01-23 1975-08-19

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50105075A (en) * 1974-01-23 1975-08-19

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57161561A (en) * 1981-03-31 1982-10-05 Nec Corp Testing method for semiconductor device
US4811242A (en) * 1986-04-25 1989-03-07 Mitsubishi Denki Kabushiki Kaisha Chinese character printer controlling device
JPS6363979A (en) * 1986-09-04 1988-03-22 Hitachi Ltd Method for aging semiconductor parts
GB2568427A (en) * 2016-08-23 2019-05-15 Jiang Weiguo Energy-saving solar panel

Also Published As

Publication number Publication date
JPS6136187B2 (en) 1986-08-16

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