JPS5512740A - Ion-injected semiconductor base plate annealing method - Google Patents
Ion-injected semiconductor base plate annealing methodInfo
- Publication number
- JPS5512740A JPS5512740A JP8550278A JP8550278A JPS5512740A JP S5512740 A JPS5512740 A JP S5512740A JP 8550278 A JP8550278 A JP 8550278A JP 8550278 A JP8550278 A JP 8550278A JP S5512740 A JPS5512740 A JP S5512740A
- Authority
- JP
- Japan
- Prior art keywords
- ion
- annealing
- base plate
- defect
- laser annealing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Semiconductor Lasers (AREA)
Abstract
PURPOSE: To enable a laser annealing to be successfully achieved without allowing residue of defect by annealing a defect caused from injection of ion at a temperature, which does not allow heat dispersion of impurity ion, prior to the laser annealing.
CONSTITUTION: A non-crystalline ion injection defect caused by injection of ion is eliminated by conducting thermal annealing at a relatively low temperature, and then impurity is electrically activated by conducting laser annealing. The thermal annealing is to be done for 24 hours at a temperature which does not allow heat dispersion of impurity ion, such as 50°. It is possible, by doing so, to achieve laser annealing without allowing residue of defect.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8550278A JPS5512740A (en) | 1978-07-12 | 1978-07-12 | Ion-injected semiconductor base plate annealing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8550278A JPS5512740A (en) | 1978-07-12 | 1978-07-12 | Ion-injected semiconductor base plate annealing method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5512740A true JPS5512740A (en) | 1980-01-29 |
Family
ID=13860700
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8550278A Pending JPS5512740A (en) | 1978-07-12 | 1978-07-12 | Ion-injected semiconductor base plate annealing method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5512740A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012117711A1 (en) * | 2011-02-28 | 2012-09-07 | パナソニック株式会社 | Method for manufacturing infrared light emitting element |
-
1978
- 1978-07-12 JP JP8550278A patent/JPS5512740A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012117711A1 (en) * | 2011-02-28 | 2012-09-07 | パナソニック株式会社 | Method for manufacturing infrared light emitting element |
JP5051331B1 (en) * | 2011-02-28 | 2012-10-17 | パナソニック株式会社 | Infrared light emitting device manufacturing method |
US8895336B2 (en) | 2011-02-28 | 2014-11-25 | Panasonic Corporation | Method of manufacturing infrared light-emitting element |
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