JPS5512740A - Ion-injected semiconductor base plate annealing method - Google Patents

Ion-injected semiconductor base plate annealing method

Info

Publication number
JPS5512740A
JPS5512740A JP8550278A JP8550278A JPS5512740A JP S5512740 A JPS5512740 A JP S5512740A JP 8550278 A JP8550278 A JP 8550278A JP 8550278 A JP8550278 A JP 8550278A JP S5512740 A JPS5512740 A JP S5512740A
Authority
JP
Japan
Prior art keywords
ion
annealing
base plate
defect
laser annealing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8550278A
Other languages
Japanese (ja)
Inventor
Hidekazu Okabayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP8550278A priority Critical patent/JPS5512740A/en
Publication of JPS5512740A publication Critical patent/JPS5512740A/en
Pending legal-status Critical Current

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  • Semiconductor Lasers (AREA)

Abstract

PURPOSE: To enable a laser annealing to be successfully achieved without allowing residue of defect by annealing a defect caused from injection of ion at a temperature, which does not allow heat dispersion of impurity ion, prior to the laser annealing.
CONSTITUTION: A non-crystalline ion injection defect caused by injection of ion is eliminated by conducting thermal annealing at a relatively low temperature, and then impurity is electrically activated by conducting laser annealing. The thermal annealing is to be done for 24 hours at a temperature which does not allow heat dispersion of impurity ion, such as 50°. It is possible, by doing so, to achieve laser annealing without allowing residue of defect.
COPYRIGHT: (C)1980,JPO&Japio
JP8550278A 1978-07-12 1978-07-12 Ion-injected semiconductor base plate annealing method Pending JPS5512740A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8550278A JPS5512740A (en) 1978-07-12 1978-07-12 Ion-injected semiconductor base plate annealing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8550278A JPS5512740A (en) 1978-07-12 1978-07-12 Ion-injected semiconductor base plate annealing method

Publications (1)

Publication Number Publication Date
JPS5512740A true JPS5512740A (en) 1980-01-29

Family

ID=13860700

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8550278A Pending JPS5512740A (en) 1978-07-12 1978-07-12 Ion-injected semiconductor base plate annealing method

Country Status (1)

Country Link
JP (1) JPS5512740A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012117711A1 (en) * 2011-02-28 2012-09-07 パナソニック株式会社 Method for manufacturing infrared light emitting element

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012117711A1 (en) * 2011-02-28 2012-09-07 パナソニック株式会社 Method for manufacturing infrared light emitting element
JP5051331B1 (en) * 2011-02-28 2012-10-17 パナソニック株式会社 Infrared light emitting device manufacturing method
US8895336B2 (en) 2011-02-28 2014-11-25 Panasonic Corporation Method of manufacturing infrared light-emitting element

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