JPS5492075A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5492075A JPS5492075A JP7178A JP7178A JPS5492075A JP S5492075 A JPS5492075 A JP S5492075A JP 7178 A JP7178 A JP 7178A JP 7178 A JP7178 A JP 7178A JP S5492075 A JPS5492075 A JP S5492075A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- punch
- sio
- ion
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 3
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7178A JPS5492075A (en) | 1977-12-28 | 1977-12-28 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7178A JPS5492075A (en) | 1977-12-28 | 1977-12-28 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5492075A true JPS5492075A (en) | 1979-07-20 |
Family
ID=11463939
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7178A Pending JPS5492075A (en) | 1977-12-28 | 1977-12-28 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5492075A (ja) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5732673A (en) * | 1980-08-06 | 1982-02-22 | Mitsubishi Electric Corp | Semiconductor device and manufacture thereof |
| JPS6269638A (ja) * | 1985-09-24 | 1987-03-30 | Nec Corp | 半導体集積回路装置 |
| JPS6337667A (ja) * | 1986-07-31 | 1988-02-18 | Fujitsu Ltd | 半導体装置の製造方法 |
-
1977
- 1977-12-28 JP JP7178A patent/JPS5492075A/ja active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5732673A (en) * | 1980-08-06 | 1982-02-22 | Mitsubishi Electric Corp | Semiconductor device and manufacture thereof |
| JPS6269638A (ja) * | 1985-09-24 | 1987-03-30 | Nec Corp | 半導体集積回路装置 |
| JPS6337667A (ja) * | 1986-07-31 | 1988-02-18 | Fujitsu Ltd | 半導体装置の製造方法 |
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