JPS5491069A - Mos field effect transistor - Google Patents
Mos field effect transistorInfo
- Publication number
- JPS5491069A JPS5491069A JP15799877A JP15799877A JPS5491069A JP S5491069 A JPS5491069 A JP S5491069A JP 15799877 A JP15799877 A JP 15799877A JP 15799877 A JP15799877 A JP 15799877A JP S5491069 A JPS5491069 A JP S5491069A
- Authority
- JP
- Japan
- Prior art keywords
- source
- drain
- layer
- substrate
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005669 field effect Effects 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 239000013078 crystal Substances 0.000 abstract 1
- 230000006866 deterioration Effects 0.000 abstract 1
- 230000010354 integration Effects 0.000 abstract 1
- 230000008961 swelling Effects 0.000 abstract 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15799877A JPS5491069A (en) | 1977-12-28 | 1977-12-28 | Mos field effect transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15799877A JPS5491069A (en) | 1977-12-28 | 1977-12-28 | Mos field effect transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5491069A true JPS5491069A (en) | 1979-07-19 |
Family
ID=15662000
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15799877A Pending JPS5491069A (en) | 1977-12-28 | 1977-12-28 | Mos field effect transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5491069A (ja) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS577967A (en) * | 1980-06-19 | 1982-01-16 | Oki Electric Ind Co Ltd | Structure of mos transistor and manufacture thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS509383A (ja) * | 1973-05-22 | 1975-01-30 | ||
| JPS52115663A (en) * | 1976-03-25 | 1977-09-28 | Toshiba Corp | Semiconductor device |
-
1977
- 1977-12-28 JP JP15799877A patent/JPS5491069A/ja active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS509383A (ja) * | 1973-05-22 | 1975-01-30 | ||
| JPS52115663A (en) * | 1976-03-25 | 1977-09-28 | Toshiba Corp | Semiconductor device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS577967A (en) * | 1980-06-19 | 1982-01-16 | Oki Electric Ind Co Ltd | Structure of mos transistor and manufacture thereof |
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