JPS5489534A - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
JPS5489534A
JPS5489534A JP15885377A JP15885377A JPS5489534A JP S5489534 A JPS5489534 A JP S5489534A JP 15885377 A JP15885377 A JP 15885377A JP 15885377 A JP15885377 A JP 15885377A JP S5489534 A JPS5489534 A JP S5489534A
Authority
JP
Japan
Prior art keywords
potential
vsub
sense amplifier
connection point
trs
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15885377A
Other languages
Japanese (ja)
Other versions
JPS6058558B2 (en
Inventor
Mitsuru Sakamoto
Toshio Wada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP52158853A priority Critical patent/JPS6058558B2/en
Publication of JPS5489534A publication Critical patent/JPS5489534A/en
Publication of JPS6058558B2 publication Critical patent/JPS6058558B2/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)

Abstract

PURPOSE:To obtain a sense amplifier circuit which realizes the large capacity of a memory element and integration to a high degree by supplying a potential, oppostie in polarity to the potential of either source or drain electrode, to a common connection point. CONSTITUTION:In the sense amplifier circuit using a N-channel MOSFET on a P- type semiconductor surface, the FF type sense amplifier consists of driving transistor Trs 110 and 110' and load Trs 106 and 106' and the source or drain electrode common-connected of Trs 110 and 110' is connected to potential (Vsub) of the substrate via Tr105 supplied with signal phic at its gate. In this way, holding common connection point 111 at a negative (Vsub) potential allows a ''0'' equivalent voltage to approximate the (Vsub) value and a difference in voltage between ''1'' and ''0'' signals can be set large, so that the malfunction mergin of the memory element due to a decrease in (VDD) value can be increased. In addition, lowering the voltage of connection point 111 below the conventional earth potential expands a potential difference with contact 109 or 109' and results in the shortening of an access time until the FF is determined.
JP52158853A 1977-12-27 1977-12-27 semiconductor storage device Expired JPS6058558B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP52158853A JPS6058558B2 (en) 1977-12-27 1977-12-27 semiconductor storage device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP52158853A JPS6058558B2 (en) 1977-12-27 1977-12-27 semiconductor storage device

Publications (2)

Publication Number Publication Date
JPS5489534A true JPS5489534A (en) 1979-07-16
JPS6058558B2 JPS6058558B2 (en) 1985-12-20

Family

ID=15680830

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52158853A Expired JPS6058558B2 (en) 1977-12-27 1977-12-27 semiconductor storage device

Country Status (1)

Country Link
JP (1) JPS6058558B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56127991A (en) * 1980-03-10 1981-10-07 Nec Corp Detecting amplifier circuit
JPS6457490A (en) * 1987-08-28 1989-03-03 Mitsubishi Electric Corp Dynamic ram

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56127991A (en) * 1980-03-10 1981-10-07 Nec Corp Detecting amplifier circuit
JPH0146952B2 (en) * 1980-03-10 1989-10-11 Nippon Electric Co
JPS6457490A (en) * 1987-08-28 1989-03-03 Mitsubishi Electric Corp Dynamic ram

Also Published As

Publication number Publication date
JPS6058558B2 (en) 1985-12-20

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