JPS5484984A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPS5484984A
JPS5484984A JP15319877A JP15319877A JPS5484984A JP S5484984 A JPS5484984 A JP S5484984A JP 15319877 A JP15319877 A JP 15319877A JP 15319877 A JP15319877 A JP 15319877A JP S5484984 A JPS5484984 A JP S5484984A
Authority
JP
Japan
Prior art keywords
pad
chips
mass production
circuit
wirings
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15319877A
Other languages
Japanese (ja)
Other versions
JPS6160584B2 (en
Inventor
Masaichi Shinoda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP15319877A priority Critical patent/JPS5484984A/en
Publication of JPS5484984A publication Critical patent/JPS5484984A/en
Publication of JPS6160584B2 publication Critical patent/JPS6160584B2/ja
Granted legal-status Critical Current

Links

Abstract

PURPOSE:To resolve practically the request for small-quantity and various-kind products by using IC chips, which are produced by the mass production system, to perform the wiring between chips in the shortest length. CONSTITUTION:Chips 2 are arranged on Si substrate 3 at an interval of 40 mum, and pad 11 is accurately arranged in the chip. CVDSiO2 4 and positive-type photo registor 5 are laminated, and the pad is light-exposed by ultraviolet rays and is developed to etch SiO2 and generate connection window 41. Next, the resistor is removed, and the pad is covered with an Al film and is photo-etched to form wirings 61 and 62. An insulating film is accumulated on wirings 61 and 62 again and is provided with the same connection pad as a normal IC circuit and is mounted in a package, and terminal wiring is performed, thus completing this circuit. As a result, the efficiency of conventional mass production can be used as it is, and specific small-quantity various-kind LSI can be realized as practical monolithic LST.
JP15319877A 1977-12-20 1977-12-20 Semiconductor integrated circuit Granted JPS5484984A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15319877A JPS5484984A (en) 1977-12-20 1977-12-20 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15319877A JPS5484984A (en) 1977-12-20 1977-12-20 Semiconductor integrated circuit

Publications (2)

Publication Number Publication Date
JPS5484984A true JPS5484984A (en) 1979-07-06
JPS6160584B2 JPS6160584B2 (en) 1986-12-22

Family

ID=15557177

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15319877A Granted JPS5484984A (en) 1977-12-20 1977-12-20 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS5484984A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59215743A (en) * 1983-05-24 1984-12-05 Toshiba Corp Large scale integrated circuit device
JPS59215744A (en) * 1983-05-24 1984-12-05 Toshiba Corp Large scale integrated circuit device
JPH04218943A (en) * 1991-04-19 1992-08-10 Toshiba Corp Manufacture of large-scale integrated circuit device
JPH09205150A (en) * 1996-12-02 1997-08-05 Toshiba Corp Manufacture of large scale integrated circuit device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4996264A (en) * 1973-01-22 1974-09-12

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4996264A (en) * 1973-01-22 1974-09-12

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59215743A (en) * 1983-05-24 1984-12-05 Toshiba Corp Large scale integrated circuit device
JPS59215744A (en) * 1983-05-24 1984-12-05 Toshiba Corp Large scale integrated circuit device
JPH04218943A (en) * 1991-04-19 1992-08-10 Toshiba Corp Manufacture of large-scale integrated circuit device
JPH09205150A (en) * 1996-12-02 1997-08-05 Toshiba Corp Manufacture of large scale integrated circuit device

Also Published As

Publication number Publication date
JPS6160584B2 (en) 1986-12-22

Similar Documents

Publication Publication Date Title
JPS5252582A (en) Device and production for semiconductor
EP0254948A3 (en) Microelectronic device and thick film hybrid circuit
JPS5484984A (en) Semiconductor integrated circuit
IE812868L (en) Removing hardened organic materials during fabrication of¹integrated circuits
JPS57211744A (en) Semiconductor integrated circuit device
JPS5732641A (en) Semiconductor device
JPS5615065A (en) Semiconductor integrated circuit
JPS5330283A (en) Production of substrates for semiconductor integrated circuits
JPS6482656A (en) Sealing structure for hybrid integrated circuit
JPS5595338A (en) Integrated circuit
JPS53110371A (en) Ceramic package type semiconductor device
JPS56140637A (en) Semiconductor device
JPS5336184A (en) Semiconductor integrated circuit
JPS5399882A (en) Integrated circuit device
JPS54107672A (en) Integrated circuit device
JPS57192062A (en) Semiconductor integrated circuit device
JPS5259576A (en) Semiconductor device
JPS54889A (en) Semiconductor integrated circuit device and its manufacture
JPS5772338A (en) Manufacture of semiconductor device
JPS54110784A (en) Semiconductor device
JPS5397791A (en) Production of semiconductor integrated circuit device
JP2935301B2 (en) Method for manufacturing semiconductor device
JPS539470A (en) Semiconductor device
JPS5771152A (en) Integrated circuit package
JPS57145335A (en) Semiconductor device

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20041029

A621 Written request for application examination

Effective date: 20041029

Free format text: JAPANESE INTERMEDIATE CODE: A621

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20080115

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20080409

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20080526

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20080513

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20080623

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20080611

A602 Written permission of extension of time

Effective date: 20080718

Free format text: JAPANESE INTERMEDIATE CODE: A602

RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7422

Effective date: 20080708

A524 Written submission of copy of amendment under section 19 (pct)

Effective date: 20080715

Free format text: JAPANESE INTERMEDIATE CODE: A524

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20080714

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Effective date: 20080916

Free format text: JAPANESE INTERMEDIATE CODE: A01

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20081006

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20111010

Year of fee payment: 3

R150 Certificate of patent (=grant) or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (prs date is renewal date of database)

Year of fee payment: 4

Free format text: PAYMENT UNTIL: 20121010

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20131010

Year of fee payment: 5

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250