JPS5469965A - Production of mesa type semiconductor device - Google Patents

Production of mesa type semiconductor device

Info

Publication number
JPS5469965A
JPS5469965A JP13741077A JP13741077A JPS5469965A JP S5469965 A JPS5469965 A JP S5469965A JP 13741077 A JP13741077 A JP 13741077A JP 13741077 A JP13741077 A JP 13741077A JP S5469965 A JPS5469965 A JP S5469965A
Authority
JP
Japan
Prior art keywords
mesa
films
grooves
parts
glass
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13741077A
Other languages
Japanese (ja)
Inventor
Masatake Saito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP13741077A priority Critical patent/JPS5469965A/en
Publication of JPS5469965A publication Critical patent/JPS5469965A/en
Pending legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/362—Laser etching
    • B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/16—Composite materials, e.g. fibre reinforced
    • B23K2103/166—Multilayered materials
    • B23K2103/172—Multilayered materials wherein at least one of the layers is non-metallic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Dicing (AREA)

Abstract

PURPOSE: To obtain a mesa type semiconductor device which does not produce any crack or chip in its glass protection films at the scribing and pelletizing by forming the glass protection films and silicon exposed parts of longitudinal and transverse line form on the bottom part of mesa groove parts.
CONSTITUTION: Mesa grooves 5 are formed in a substrate 1 having a PN junction 4 and photo resist films 6 are formed only on the bottom part thereof. Next, glass powder 7 is deposited in the mesa groove parts having been removed of the photo resist films 6 and is heated and melted to form glass protection films 8. At the same time the photo resist films 6 are thermally decomposed to let the bottom part of the mesa grooves to be exposed. Next, scribe grooves 14 are formed by a laser beam with the silicon exposed parts formed in the bottom parts of the mesa grooves 5 as a center. At the time of pelletizing the substrate by pressing with rollers, contact between the adjoining pellets with themselves does not occur and therefore fresh production of cracks and chips in the glass films does not occur.
COPYRIGHT: (C)1979,JPO&Japio
JP13741077A 1977-11-15 1977-11-15 Production of mesa type semiconductor device Pending JPS5469965A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13741077A JPS5469965A (en) 1977-11-15 1977-11-15 Production of mesa type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13741077A JPS5469965A (en) 1977-11-15 1977-11-15 Production of mesa type semiconductor device

Publications (1)

Publication Number Publication Date
JPS5469965A true JPS5469965A (en) 1979-06-05

Family

ID=15197980

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13741077A Pending JPS5469965A (en) 1977-11-15 1977-11-15 Production of mesa type semiconductor device

Country Status (1)

Country Link
JP (1) JPS5469965A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62109324A (en) * 1985-11-07 1987-05-20 Fuji Electric Co Ltd Manufacture of semiconductor element
WO2005104250A1 (en) * 2004-04-20 2005-11-03 Showa Denko K.K. Production method of compound semiconductor light-emitting device wafer

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5629383A (en) * 1979-08-17 1981-03-24 Nippon Telegr & Teleph Corp <Ntt> Manufacture of tunnel-junction type josephson element

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5629383A (en) * 1979-08-17 1981-03-24 Nippon Telegr & Teleph Corp <Ntt> Manufacture of tunnel-junction type josephson element

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62109324A (en) * 1985-11-07 1987-05-20 Fuji Electric Co Ltd Manufacture of semiconductor element
WO2005104250A1 (en) * 2004-04-20 2005-11-03 Showa Denko K.K. Production method of compound semiconductor light-emitting device wafer
US7700413B2 (en) 2004-04-20 2010-04-20 Showa Denko K.K. Production method of compound semiconductor light-emitting device wafer

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