JPS5469071A - Vapor deposition pre-processing method - Google Patents

Vapor deposition pre-processing method

Info

Publication number
JPS5469071A
JPS5469071A JP13572477A JP13572477A JPS5469071A JP S5469071 A JPS5469071 A JP S5469071A JP 13572477 A JP13572477 A JP 13572477A JP 13572477 A JP13572477 A JP 13572477A JP S5469071 A JPS5469071 A JP S5469071A
Authority
JP
Japan
Prior art keywords
film
evaporation
residue
incineration
ozone
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13572477A
Other languages
Japanese (ja)
Inventor
Toshihiro Kobayashi
Akihiro Tomosawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP13572477A priority Critical patent/JPS5469071A/en
Publication of JPS5469071A publication Critical patent/JPS5469071A/en
Pending legal-status Critical Current

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  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE: To form the evaporation film which features high adhesive force and causes no step break of the wiring through evaporation after the residue is removed through the sputtering process via the inactive gas of the incineration with O2.
CONSTITUTION: The complete removal of the resist film is difficult by the photo resist process before evaporation, so the organic matters and the impurities remain on the surface of the PSG film or the like. As a result, the step coverage is deteriorated to produce the step break for the wiring evpaporation film of the device. In this connection, the ozone sulphuric acid treatment is given to the opening surface of the electrode window before evaporation to remove the residue and then to have the incinaration process. Otherwise, the residue is removed only through the incineration process with no ozone sulphuric acid treatment, and then Al is evaporated. Thus, the step break is reduced greatly. The sputtering process in place of the incineration process can secure the same effect.
COPYRIGHT: (C)1979,JPO&Japio
JP13572477A 1977-11-14 1977-11-14 Vapor deposition pre-processing method Pending JPS5469071A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13572477A JPS5469071A (en) 1977-11-14 1977-11-14 Vapor deposition pre-processing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13572477A JPS5469071A (en) 1977-11-14 1977-11-14 Vapor deposition pre-processing method

Publications (1)

Publication Number Publication Date
JPS5469071A true JPS5469071A (en) 1979-06-02

Family

ID=15158391

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13572477A Pending JPS5469071A (en) 1977-11-14 1977-11-14 Vapor deposition pre-processing method

Country Status (1)

Country Link
JP (1) JPS5469071A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57138139A (en) * 1981-02-19 1982-08-26 Nec Home Electronics Ltd Etching method for insulating film of semiconductor device
JPS5896412A (en) * 1981-12-04 1983-06-08 Fujitsu Ltd Manufacture for piezo-electric vibrator

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50100973A (en) * 1973-10-30 1975-08-11
JPS5121784A (en) * 1974-08-17 1976-02-21 Fujitsu Ltd Handotaisochino seizohoho

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50100973A (en) * 1973-10-30 1975-08-11
JPS5121784A (en) * 1974-08-17 1976-02-21 Fujitsu Ltd Handotaisochino seizohoho

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57138139A (en) * 1981-02-19 1982-08-26 Nec Home Electronics Ltd Etching method for insulating film of semiconductor device
JPS5896412A (en) * 1981-12-04 1983-06-08 Fujitsu Ltd Manufacture for piezo-electric vibrator

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