JPS5455185A - Semiconductor light emitting device - Google Patents
Semiconductor light emitting deviceInfo
- Publication number
- JPS5455185A JPS5455185A JP12212777A JP12212777A JPS5455185A JP S5455185 A JPS5455185 A JP S5455185A JP 12212777 A JP12212777 A JP 12212777A JP 12212777 A JP12212777 A JP 12212777A JP S5455185 A JPS5455185 A JP S5455185A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- clad layer
- liquid phase
- inp
- becomes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Abstract
PURPOSE: To reduce oscillation the rshold current by laminating an InGaAsP first clad layer, InGaAs P active layer, InP second clad layer on an InP substrate while defining their compositions and allowing these grow epitaxially out of liquid phase.
CONSTITUTION: A In1-xGaxAsyP1-y(0<x<1,0<1) lager 2 which becomes a first clad layer is liquid phase epitaxially grown on a InP substrate 1, and a In1-x,Gax,Asy,P1-y,(0<x<x',0<y<y') layer 3 is similarily liquid phase eptitaxially grown thereon. Next, a InP layer 4 which becomes a second clad layer is likewise epitaxially grown in lamination thereon. Then, the thicknesses become even and yet no undulations are produced on the surface. Furthermore, there are no stacking faults, oscillation threshold current lowers and the device becomes ideally suited for semiconductor laser
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12212777A JPS5455185A (en) | 1977-10-11 | 1977-10-11 | Semiconductor light emitting device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12212777A JPS5455185A (en) | 1977-10-11 | 1977-10-11 | Semiconductor light emitting device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5455185A true JPS5455185A (en) | 1979-05-02 |
Family
ID=14828275
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12212777A Pending JPS5455185A (en) | 1977-10-11 | 1977-10-11 | Semiconductor light emitting device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5455185A (en) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4971885A (en) * | 1973-09-21 | 1974-07-11 |
-
1977
- 1977-10-11 JP JP12212777A patent/JPS5455185A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4971885A (en) * | 1973-09-21 | 1974-07-11 |
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