JPS5455185A - Semiconductor light emitting device - Google Patents

Semiconductor light emitting device

Info

Publication number
JPS5455185A
JPS5455185A JP12212777A JP12212777A JPS5455185A JP S5455185 A JPS5455185 A JP S5455185A JP 12212777 A JP12212777 A JP 12212777A JP 12212777 A JP12212777 A JP 12212777A JP S5455185 A JPS5455185 A JP S5455185A
Authority
JP
Japan
Prior art keywords
layer
clad layer
liquid phase
inp
becomes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12212777A
Other languages
Japanese (ja)
Inventor
Shinichi Takahashi
Takeshi Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP12212777A priority Critical patent/JPS5455185A/en
Publication of JPS5455185A publication Critical patent/JPS5455185A/en
Pending legal-status Critical Current

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  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE: To reduce oscillation the rshold current by laminating an InGaAsP first clad layer, InGaAs P active layer, InP second clad layer on an InP substrate while defining their compositions and allowing these grow epitaxially out of liquid phase.
CONSTITUTION: A In1-xGaxAsyP1-y(0<x<1,0<1) lager 2 which becomes a first clad layer is liquid phase epitaxially grown on a InP substrate 1, and a In1-x,Gax,Asy,P1-y,(0<x<x',0<y<y') layer 3 is similarily liquid phase eptitaxially grown thereon. Next, a InP layer 4 which becomes a second clad layer is likewise epitaxially grown in lamination thereon. Then, the thicknesses become even and yet no undulations are produced on the surface. Furthermore, there are no stacking faults, oscillation threshold current lowers and the device becomes ideally suited for semiconductor laser
COPYRIGHT: (C)1979,JPO&Japio
JP12212777A 1977-10-11 1977-10-11 Semiconductor light emitting device Pending JPS5455185A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12212777A JPS5455185A (en) 1977-10-11 1977-10-11 Semiconductor light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12212777A JPS5455185A (en) 1977-10-11 1977-10-11 Semiconductor light emitting device

Publications (1)

Publication Number Publication Date
JPS5455185A true JPS5455185A (en) 1979-05-02

Family

ID=14828275

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12212777A Pending JPS5455185A (en) 1977-10-11 1977-10-11 Semiconductor light emitting device

Country Status (1)

Country Link
JP (1) JPS5455185A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4971885A (en) * 1973-09-21 1974-07-11

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4971885A (en) * 1973-09-21 1974-07-11

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