JPS5452484A - Semiconductor luminous device - Google Patents

Semiconductor luminous device

Info

Publication number
JPS5452484A
JPS5452484A JP11417377A JP11417377A JPS5452484A JP S5452484 A JPS5452484 A JP S5452484A JP 11417377 A JP11417377 A JP 11417377A JP 11417377 A JP11417377 A JP 11417377A JP S5452484 A JPS5452484 A JP S5452484A
Authority
JP
Japan
Prior art keywords
type
current
photo output
variation
gain distribution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11417377A
Other languages
Japanese (ja)
Other versions
JPS5733714B2 (en
Inventor
Hiroshi Nishi
Shigeo Osaka
Hisao Sudo
Kimito Takusagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP11417377A priority Critical patent/JPS5452484A/en
Publication of JPS5452484A publication Critical patent/JPS5452484A/en
Publication of JPS5733714B2 publication Critical patent/JPS5733714B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE: To improve the linearity of the characteristic of a current to a photo output, by constituting stripes so that the variation in gain distribution will be generated at a prescribed position inside a luminous region.
CONSTITUTION: On n-type GsAsl, n-type Ga1-xAlxAs2, p-type Ga1-yAlyAs3, p-type Ga1-xAlxAs4, and p-type GaAs5 are stacked, and S is selectively diffused into the stripe region of width W to form n-type conversion regions 6 to 8, thereby obtaining current stopping regions. In this way, more than two injection current paths for causing luminescence are formed so that the variation in gain distribution will be at a fixed position, and the oscillation with the transverse mode made stable is caused in order to make it possible to maintain linearly the relation of a current to a photo output over the broad current range. Consequently, the deterioration of a photo output waveform and the decrease of the coupling efficiency with optical fiber can be eliminated
COPYRIGHT: (C)1979,JPO&Japio
JP11417377A 1977-09-22 1977-09-22 Semiconductor luminous device Granted JPS5452484A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11417377A JPS5452484A (en) 1977-09-22 1977-09-22 Semiconductor luminous device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11417377A JPS5452484A (en) 1977-09-22 1977-09-22 Semiconductor luminous device

Publications (2)

Publication Number Publication Date
JPS5452484A true JPS5452484A (en) 1979-04-25
JPS5733714B2 JPS5733714B2 (en) 1982-07-19

Family

ID=14630996

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11417377A Granted JPS5452484A (en) 1977-09-22 1977-09-22 Semiconductor luminous device

Country Status (1)

Country Link
JP (1) JPS5452484A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5712591A (en) * 1980-06-02 1982-01-22 Western Electric Co Semiconductor junction laser
JPH01214188A (en) * 1988-02-23 1989-08-28 Sony Corp Semiconductor laser
JP2001160647A (en) * 1999-09-24 2001-06-12 Sharp Corp Semiconductor laser device, optical transmission device, optical transmission system, electronic apparatus, control unit, connector, communication device, optical transmission method and data transmitting and receiving method

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5074388A (en) * 1973-11-01 1975-06-19
JPS5320786A (en) * 1976-08-10 1978-02-25 Nec Corp Injection type semiconductor laser element

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5074388A (en) * 1973-11-01 1975-06-19
JPS5320786A (en) * 1976-08-10 1978-02-25 Nec Corp Injection type semiconductor laser element

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5712591A (en) * 1980-06-02 1982-01-22 Western Electric Co Semiconductor junction laser
JPH01214188A (en) * 1988-02-23 1989-08-28 Sony Corp Semiconductor laser
JP2001160647A (en) * 1999-09-24 2001-06-12 Sharp Corp Semiconductor laser device, optical transmission device, optical transmission system, electronic apparatus, control unit, connector, communication device, optical transmission method and data transmitting and receiving method

Also Published As

Publication number Publication date
JPS5733714B2 (en) 1982-07-19

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