JPS5451318A - Solid pickup unit - Google Patents

Solid pickup unit

Info

Publication number
JPS5451318A
JPS5451318A JP12688577A JP12688577A JPS5451318A JP S5451318 A JPS5451318 A JP S5451318A JP 12688577 A JP12688577 A JP 12688577A JP 12688577 A JP12688577 A JP 12688577A JP S5451318 A JPS5451318 A JP S5451318A
Authority
JP
Japan
Prior art keywords
electrode
overflow
pickup unit
electrically
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12688577A
Other languages
English (en)
Japanese (ja)
Inventor
Nariyuki Ochi
Takeo Hashimoto
Yoshiaki Hagiwara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP12688577A priority Critical patent/JPS5451318A/ja
Priority to FR7827214A priority patent/FR2409646A1/fr
Priority to DE2842346A priority patent/DE2842346C2/de
Priority to CA312,252A priority patent/CA1125421A/en
Priority to GB7838523A priority patent/GB2007937B/en
Priority to NL7809866A priority patent/NL7809866A/xx
Publication of JPS5451318A publication Critical patent/JPS5451318A/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/10Screens on or from which an image or pattern is formed, picked up, converted or stored
    • H01J29/36Photoelectric screens; Charge-storage screens
    • H01J29/39Charge-storage screens
    • H01J29/45Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen
    • H01J29/451Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions
    • H01J29/453Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions provided with diode arrays
    • H01J29/455Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions provided with diode arrays formed on a silicon substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/148Charge coupled imagers
    • H01L27/14831Area CCD imagers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/148Charge coupled imagers
    • H01L27/14887Blooming suppression
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50Control of the SSIS exposure
    • H04N25/57Control of the dynamic range
    • H04N25/571Control of the dynamic range involving a non-linear response
    • H04N25/575Control of the dynamic range involving a non-linear response with a response composed of multiple slopes
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/71Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/73Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors using interline transfer [IT]
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/76Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nonlinear Science (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Picture Signal Circuits (AREA)
JP12688577A 1977-09-29 1977-09-29 Solid pickup unit Pending JPS5451318A (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP12688577A JPS5451318A (en) 1977-09-29 1977-09-29 Solid pickup unit
FR7827214A FR2409646A1 (fr) 1977-09-29 1978-09-22 Detecteur d'image en technique etat solide
DE2842346A DE2842346C2 (de) 1977-09-29 1978-09-28 CCD und Verfahren zum Betreiben eines solchen im Zwischenspaltenprinzip
CA312,252A CA1125421A (en) 1977-09-29 1978-09-28 Solid state image sensor
GB7838523A GB2007937B (en) 1977-09-29 1978-09-28 Solid state image sensors
NL7809866A NL7809866A (nl) 1977-09-29 1978-09-29 Solid-state beelddetectie-inrichting.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12688577A JPS5451318A (en) 1977-09-29 1977-09-29 Solid pickup unit

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP1138150A Division JPH02243073A (ja) 1989-05-31 1989-05-31 固体撮像装置

Publications (1)

Publication Number Publication Date
JPS5451318A true JPS5451318A (en) 1979-04-23

Family

ID=14946246

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12688577A Pending JPS5451318A (en) 1977-09-29 1977-09-29 Solid pickup unit

Country Status (6)

Country Link
JP (1) JPS5451318A (US07291463-20071106-C00074.png)
CA (1) CA1125421A (US07291463-20071106-C00074.png)
DE (1) DE2842346C2 (US07291463-20071106-C00074.png)
FR (1) FR2409646A1 (US07291463-20071106-C00074.png)
GB (1) GB2007937B (US07291463-20071106-C00074.png)
NL (1) NL7809866A (US07291463-20071106-C00074.png)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55151592U (US07291463-20071106-C00074.png) * 1979-04-19 1980-10-31
JPS55163956A (en) * 1979-06-08 1980-12-20 Nec Corp Shift register and its driving method
JPS55163953A (en) * 1979-06-08 1980-12-20 Nec Corp Ccd shift register
JPS55163882A (en) * 1979-06-06 1980-12-20 Nec Corp System for driving charge transfer element
JPS5665578A (en) * 1979-10-31 1981-06-03 Fujitsu Ltd Two dimensional solidstate image sensor
JPS56136086A (en) * 1980-03-27 1981-10-23 Fujitsu Ltd Two-dimensional image pickup device
WO1983000267A1 (en) * 1981-07-06 1983-01-20 Takeshita, Kaneyoshi Solid state image pickup device

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2939403A1 (de) * 1979-09-28 1981-04-16 Siemens AG, 1000 Berlin und 8000 München Monolithisch integrierte schaltung zur zeilenweisen bildabtastung
JPS5685981A (en) * 1979-12-15 1981-07-13 Sharp Corp Solid image pickup apparatus
JPS56104582A (en) * 1980-01-25 1981-08-20 Toshiba Corp Solid image pickup device
JPS56160081A (en) * 1980-05-14 1981-12-09 Matsushita Electronics Corp Solid state image pickup apparatus
DE3173604D1 (en) * 1981-05-19 1986-03-13 Texas Instruments Inc Infrared imaging system with infrared detector matrix, and method of imaging infrared energy
DE3121494A1 (de) * 1981-05-29 1983-01-05 Siemens AG, 1000 Berlin und 8000 München Anordnung zum beruehrungslosen messen von elektrischen ladungsbildern bei elektroradiographischen aufzeichnungsverfahren
EP0066020B1 (en) * 1981-06-03 1985-10-23 Texas Instruments Incorporated Infrared energy detector system utilizing a charge transfer device sensor
JPS5847378A (ja) * 1981-09-17 1983-03-19 Canon Inc 撮像素子
JPS58142570A (ja) * 1982-02-19 1983-08-24 Sony Corp 固体撮像装置
JPS60254770A (ja) * 1984-05-31 1985-12-16 Fujitsu Ltd イメージセンサ
JPS61144874A (ja) * 1984-12-19 1986-07-02 Toshiba Corp 電荷転送装置
NL8503243A (nl) * 1985-11-25 1987-06-16 Optische Ind De Oude Delft Nv Beeldopneeminrichting voor digitale radiografie.
JPH07107928B2 (ja) * 1986-03-25 1995-11-15 ソニー株式会社 固体撮像装置
JPH02113678A (ja) * 1988-10-21 1990-04-25 Nec Corp 固体撮像装置
US5055667A (en) * 1990-06-21 1991-10-08 Loral Fairchild Corporation Non-linear photosite response in CCD imagers
US5276520A (en) * 1991-06-07 1994-01-04 Eastman Kodak Company Enhancing exposure latitude of image sensors
FR2687265A1 (fr) * 1993-01-08 1993-08-13 Scanera Sc Dispositif de prise de vue electronique a haute dynamique et procede de prise de vue de scenes tres contrastees.

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50128918A (US07291463-20071106-C00074.png) * 1974-03-29 1975-10-11
JPS51142908A (en) * 1975-05-21 1976-12-08 Rca Corp Method of operating picture device
JPS5258414A (en) * 1975-11-10 1977-05-13 Sony Corp Solidstate video signal pick up unit
JPS52109825A (en) * 1976-03-11 1977-09-14 Sony Corp Solid state pick up unit

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3931465A (en) * 1975-01-13 1976-01-06 Rca Corporation Blooming control for charge coupled imager
JPS5937629B2 (ja) * 1975-01-30 1984-09-11 ソニー株式会社 固体撮像体

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50128918A (US07291463-20071106-C00074.png) * 1974-03-29 1975-10-11
JPS51142908A (en) * 1975-05-21 1976-12-08 Rca Corp Method of operating picture device
JPS5258414A (en) * 1975-11-10 1977-05-13 Sony Corp Solidstate video signal pick up unit
JPS52109825A (en) * 1976-03-11 1977-09-14 Sony Corp Solid state pick up unit

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55151592U (US07291463-20071106-C00074.png) * 1979-04-19 1980-10-31
JPS55163882A (en) * 1979-06-06 1980-12-20 Nec Corp System for driving charge transfer element
JPH0118629B2 (US07291463-20071106-C00074.png) * 1979-06-06 1989-04-06 Nippon Electric Co
JPS55163956A (en) * 1979-06-08 1980-12-20 Nec Corp Shift register and its driving method
JPS55163953A (en) * 1979-06-08 1980-12-20 Nec Corp Ccd shift register
JPH0118630B2 (US07291463-20071106-C00074.png) * 1979-06-08 1989-04-06 Nippon Electric Co
JPS5665578A (en) * 1979-10-31 1981-06-03 Fujitsu Ltd Two dimensional solidstate image sensor
JPS56136086A (en) * 1980-03-27 1981-10-23 Fujitsu Ltd Two-dimensional image pickup device
WO1983000267A1 (en) * 1981-07-06 1983-01-20 Takeshita, Kaneyoshi Solid state image pickup device

Also Published As

Publication number Publication date
DE2842346C2 (de) 1987-05-14
NL7809866A (nl) 1979-04-02
GB2007937B (en) 1982-03-03
CA1125421A (en) 1982-06-08
FR2409646B1 (US07291463-20071106-C00074.png) 1983-11-18
FR2409646A1 (fr) 1979-06-15
DE2842346A1 (de) 1979-04-12
GB2007937A (en) 1979-05-23

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