JPS5436828B2 - - Google Patents

Info

Publication number
JPS5436828B2
JPS5436828B2 JP9329774A JP9329774A JPS5436828B2 JP S5436828 B2 JPS5436828 B2 JP S5436828B2 JP 9329774 A JP9329774 A JP 9329774A JP 9329774 A JP9329774 A JP 9329774A JP S5436828 B2 JPS5436828 B2 JP S5436828B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP9329774A
Other languages
Japanese (ja)
Other versions
JPS5121471A (US20050065096A1-20050324-C00069.png
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP9329774A priority Critical patent/JPS5436828B2/ja
Priority to DE2536363A priority patent/DE2536363C3/de
Priority to US05/605,603 priority patent/US4008412A/en
Publication of JPS5121471A publication Critical patent/JPS5121471A/ja
Publication of JPS5436828B2 publication Critical patent/JPS5436828B2/ja
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02Main electrodes
    • H01J1/30Cold cathodes, e.g. field-emissive cathode
    • H01J1/304Field-emissive cathodes
    • H01J1/3042Field-emissive cathodes microengineered, e.g. Spindt-type
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02Manufacture of electrodes or electrode systems
    • H01J9/022Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Cold Cathode And The Manufacture (AREA)
JP9329774A 1974-08-16 1974-08-16 Expired JPS5436828B2 (US20050065096A1-20050324-C00069.png)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP9329774A JPS5436828B2 (US20050065096A1-20050324-C00069.png) 1974-08-16 1974-08-16
DE2536363A DE2536363C3 (de) 1974-08-16 1975-08-14 Dünnschicht-Feldelektronenemissionsquelle and Verfahren zu ihrer Herstellung
US05/605,603 US4008412A (en) 1974-08-16 1975-08-18 Thin-film field-emission electron source and a method for manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9329774A JPS5436828B2 (US20050065096A1-20050324-C00069.png) 1974-08-16 1974-08-16

Publications (2)

Publication Number Publication Date
JPS5121471A JPS5121471A (US20050065096A1-20050324-C00069.png) 1976-02-20
JPS5436828B2 true JPS5436828B2 (US20050065096A1-20050324-C00069.png) 1979-11-12

Family

ID=14078420

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9329774A Expired JPS5436828B2 (US20050065096A1-20050324-C00069.png) 1974-08-16 1974-08-16

Country Status (3)

Country Link
US (1) US4008412A (US20050065096A1-20050324-C00069.png)
JP (1) JPS5436828B2 (US20050065096A1-20050324-C00069.png)
DE (1) DE2536363C3 (US20050065096A1-20050324-C00069.png)

Families Citing this family (133)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4168213A (en) * 1976-04-29 1979-09-18 U.S. Philips Corporation Field emission device and method of forming same
NL7604569A (nl) * 1976-04-29 1977-11-01 Philips Nv Veldemitterinrichting en werkwijze tot het vormen daarvan.
JPS608574B2 (ja) * 1978-08-12 1985-03-04 大阪大学長 イオン源用半導体エミツタ−
DE2920569A1 (de) * 1979-05-21 1980-12-04 Ibm Deutschland Elektrodenfuehrung fuer metallpapier- drucker
NL184589C (nl) * 1979-07-13 1989-09-01 Philips Nv Halfgeleiderinrichting voor het opwekken van een elektronenbundel en werkwijze voor het vervaardigen van een dergelijke halfgeleiderinrichting.
US4307507A (en) * 1980-09-10 1981-12-29 The United States Of America As Represented By The Secretary Of The Navy Method of manufacturing a field-emission cathode structure
US4410832A (en) * 1980-12-15 1983-10-18 The United States Of America As Represented By The Secretary Of The Army EBS Device with cold-cathode
JPS587740A (ja) * 1981-06-30 1983-01-17 インタ−ナシヨナル・ビジネス・マシ−ンズ・コ−ポレ−シヨン カソード用の電子放出層を形成する方法
US4513308A (en) * 1982-09-23 1985-04-23 The United States Of America As Represented By The Secretary Of The Navy p-n Junction controlled field emitter array cathode
DE3340777A1 (de) * 1983-11-11 1985-05-23 M.A.N. Maschinenfabrik Augsburg-Nürnberg AG, 8000 München Verfahren zur herstellung von duennfilm-feldeffekt-kathoden
NL8400297A (nl) * 1984-02-01 1985-09-02 Philips Nv Halfgeleiderinrichting voor het opwekken van een elektronenbundel.
FR2593953B1 (fr) * 1986-01-24 1988-04-29 Commissariat Energie Atomique Procede de fabrication d'un dispositif de visualisation par cathodoluminescence excitee par emission de champ
US4994708A (en) * 1986-07-01 1991-02-19 Canon Kabushiki Kaisha Cold cathode device
US5176557A (en) * 1987-02-06 1993-01-05 Canon Kabushiki Kaisha Electron emission element and method of manufacturing the same
US5201681A (en) * 1987-02-06 1993-04-13 Canon Kabushiki Kaisha Method of emitting electrons
US4721885A (en) * 1987-02-11 1988-01-26 Sri International Very high speed integrated microelectronic tubes
DE3782247D1 (de) * 1987-04-22 1992-11-19 Christensen Alton O Feldemissionsvorrichtung.
US4904895A (en) 1987-05-06 1990-02-27 Canon Kabushiki Kaisha Electron emission device
GB8720792D0 (en) * 1987-09-04 1987-10-14 Gen Electric Co Plc Vacuum devices
FR2629264B1 (fr) * 1988-03-25 1990-11-16 Thomson Csf Procede de fabrication d'emetteurs a pointes a emission de champ, et son application a la realisation de reseaux d'emetteurs
US5090932A (en) * 1988-03-25 1992-02-25 Thomson-Csf Method for the fabrication of field emission type sources, and application thereof to the making of arrays of emitters
US4926056A (en) * 1988-06-10 1990-05-15 Sri International Microelectronic field ionizer and method of fabricating the same
GB2227362B (en) * 1989-01-18 1992-11-04 Gen Electric Co Plc Electronic devices
US4956574A (en) * 1989-08-08 1990-09-11 Motorola, Inc. Switched anode field emission device
US4943343A (en) * 1989-08-14 1990-07-24 Zaher Bardai Self-aligned gate process for fabricating field emitter arrays
DE69025831T2 (de) * 1989-09-07 1996-09-19 Canon Kk Elektronemittierende Vorrichtung; Herstellungsverfahren Elektronemittierende Vorrichtung, Herstellungsverfahren derselben und Anzeigegerät und Elektronstrahl- Schreibvorrichtung, welche diese Vorrichtung verwendet.
WO1991005363A1 (en) * 1989-09-29 1991-04-18 Motorola, Inc. Flat panel display using field emission devices
US5019003A (en) * 1989-09-29 1991-05-28 Motorola, Inc. Field emission device having preformed emitters
US5055077A (en) * 1989-11-22 1991-10-08 Motorola, Inc. Cold cathode field emission device having an electrode in an encapsulating layer
US5229682A (en) * 1989-12-18 1993-07-20 Seiko Epson Corporation Field electron emission device
KR910013438A (ko) * 1989-12-18 1991-08-08 야마무라 가쯔미 필드 전자 방출 장치 및 그 생산 공정
US5228878A (en) * 1989-12-18 1993-07-20 Seiko Epson Corporation Field electron emission device production method
US5412285A (en) * 1990-12-06 1995-05-02 Seiko Epson Corporation Linear amplifier incorporating a field emission device having specific gap distances between gate and cathode
US5038070A (en) * 1989-12-26 1991-08-06 Hughes Aircraft Company Field emitter structure and fabrication process
US5079476A (en) * 1990-02-09 1992-01-07 Motorola, Inc. Encapsulated field emission device
US5030921A (en) * 1990-02-09 1991-07-09 Motorola, Inc. Cascaded cold cathode field emission devices
US5142184B1 (en) * 1990-02-09 1995-11-21 Motorola Inc Cold cathode field emission device with integral emitter ballasting
US5007873A (en) * 1990-02-09 1991-04-16 Motorola, Inc. Non-planar field emission device having an emitter formed with a substantially normal vapor deposition process
DE69027611T2 (de) * 1990-07-18 1997-01-23 Ibm Herstellungsverfahren und struktur einer integrierten vakuum-mikroelektronischen vorrichtung
US5203731A (en) * 1990-07-18 1993-04-20 International Business Machines Corporation Process and structure of an integrated vacuum microelectronic device
US5334908A (en) * 1990-07-18 1994-08-02 International Business Machines Corporation Structures and processes for fabricating field emission cathode tips using secondary cusp
US5163328A (en) * 1990-08-06 1992-11-17 Colin Electronics Co., Ltd. Miniature pressure sensor and pressure sensor arrays
US5148078A (en) * 1990-08-29 1992-09-15 Motorola, Inc. Field emission device employing a concentric post
US5461280A (en) * 1990-08-29 1995-10-24 Motorola Field emission device employing photon-enhanced electron emission
US5157309A (en) * 1990-09-13 1992-10-20 Motorola Inc. Cold-cathode field emission device employing a current source means
US5136764A (en) * 1990-09-27 1992-08-11 Motorola, Inc. Method for forming a field emission device
US5281890A (en) * 1990-10-30 1994-01-25 Motorola, Inc. Field emission device having a central anode
US5218273A (en) * 1991-01-25 1993-06-08 Motorola, Inc. Multi-function field emission device
JP2626276B2 (ja) * 1991-02-06 1997-07-02 双葉電子工業株式会社 電子放出素子
DE69211581T2 (de) * 1991-03-13 1997-02-06 Sony Corp Anordnung von Feldemissionskathoden
US5144191A (en) * 1991-06-12 1992-09-01 Mcnc Horizontal microelectronic field emission devices
US5129850A (en) * 1991-08-20 1992-07-14 Motorola, Inc. Method of making a molded field emission electron emitter employing a diamond coating
US5141460A (en) * 1991-08-20 1992-08-25 Jaskie James E Method of making a field emission electron source employing a diamond coating
US5138237A (en) * 1991-08-20 1992-08-11 Motorola, Inc. Field emission electron device employing a modulatable diamond semiconductor emitter
US5382867A (en) * 1991-10-02 1995-01-17 Sharp Kabushiki Kaisha Field-emission type electronic device
US5536193A (en) * 1991-11-07 1996-07-16 Microelectronics And Computer Technology Corporation Method of making wide band gap field emitter
US5266530A (en) * 1991-11-08 1993-11-30 Bell Communications Research, Inc. Self-aligned gated electron field emitter
US5696028A (en) * 1992-02-14 1997-12-09 Micron Technology, Inc. Method to form an insulative barrier useful in field emission displays for reducing surface leakage
US5229331A (en) * 1992-02-14 1993-07-20 Micron Technology, Inc. Method to form self-aligned gate structures around cold cathode emitter tips using chemical mechanical polishing technology
US5653619A (en) * 1992-03-02 1997-08-05 Micron Technology, Inc. Method to form self-aligned gate structures and focus rings
US5371431A (en) * 1992-03-04 1994-12-06 Mcnc Vertical microelectronic field emission devices including elongate vertical pillars having resistive bottom portions
US5686791A (en) * 1992-03-16 1997-11-11 Microelectronics And Computer Technology Corp. Amorphic diamond film flat field emission cathode
US5675216A (en) * 1992-03-16 1997-10-07 Microelectronics And Computer Technololgy Corp. Amorphic diamond film flat field emission cathode
US5679043A (en) * 1992-03-16 1997-10-21 Microelectronics And Computer Technology Corporation Method of making a field emitter
US5449970A (en) * 1992-03-16 1995-09-12 Microelectronics And Computer Technology Corporation Diode structure flat panel display
US6127773A (en) * 1992-03-16 2000-10-03 Si Diamond Technology, Inc. Amorphic diamond film flat field emission cathode
US5543684A (en) 1992-03-16 1996-08-06 Microelectronics And Computer Technology Corporation Flat panel display based on diamond thin films
US5763997A (en) * 1992-03-16 1998-06-09 Si Diamond Technology, Inc. Field emission display device
US5548185A (en) * 1992-03-16 1996-08-20 Microelectronics And Computer Technology Corporation Triode structure flat panel display employing flat field emission cathode
JP2897520B2 (ja) * 1992-04-02 1999-05-31 日本電気株式会社 冷陰極
KR950004516B1 (ko) * 1992-04-29 1995-05-01 삼성전관주식회사 필드 에미션 디스플레이와 그 제조방법
GB9210419D0 (en) * 1992-05-15 1992-07-01 Marconi Gec Ltd Cathode structures
US5499938A (en) * 1992-07-14 1996-03-19 Kabushiki Kaisha Toshiba Field emission cathode structure, method for production thereof, and flat panel display device using same
US5374868A (en) * 1992-09-11 1994-12-20 Micron Display Technology, Inc. Method for formation of a trench accessible cold-cathode field emission device
KR960009127B1 (en) * 1993-01-06 1996-07-13 Samsung Display Devices Co Ltd Silicon field emission emitter and the manufacturing method
US5494179A (en) * 1993-01-22 1996-02-27 Matsushita Electric Industrial Co., Ltd. Field-emitter having a sharp apex and small-apertured gate and method for fabricating emitter
JP2694889B2 (ja) * 1993-03-10 1997-12-24 マイクロン・テクノロジー・インコーポレイテッド セルフアラインゲート構造および集束リングの形成法
US5903098A (en) * 1993-03-11 1999-05-11 Fed Corporation Field emission display device having multiplicity of through conductive vias and a backside connector
US5561339A (en) * 1993-03-11 1996-10-01 Fed Corporation Field emission array magnetic sensor devices
WO1994020975A1 (en) * 1993-03-11 1994-09-15 Fed Corporation Emitter tip structure and field emission device comprising same, and method of making same
US5534743A (en) * 1993-03-11 1996-07-09 Fed Corporation Field emission display devices, and field emission electron beam source and isolation structure components therefor
US5559389A (en) * 1993-09-08 1996-09-24 Silicon Video Corporation Electron-emitting devices having variously constituted electron-emissive elements, including cones or pedestals
US7025892B1 (en) 1993-09-08 2006-04-11 Candescent Technologies Corporation Method for creating gated filament structures for field emission displays
US5564959A (en) * 1993-09-08 1996-10-15 Silicon Video Corporation Use of charged-particle tracks in fabricating gated electron-emitting devices
US5462467A (en) * 1993-09-08 1995-10-31 Silicon Video Corporation Fabrication of filamentary field-emission device, including self-aligned gate
RU2141698C1 (ru) * 1993-11-04 1999-11-20 Микроэлектроникс энд Компьютер Текнолоджи Корпорейшн Способ изготовления систем дисплея с плоским экраном и компонентов
US5528103A (en) * 1994-01-31 1996-06-18 Silicon Video Corporation Field emitter with focusing ridges situated to sides of gate
US5583393A (en) * 1994-03-24 1996-12-10 Fed Corporation Selectively shaped field emission electron beam source, and phosphor array for use therewith
EP0675519A1 (en) * 1994-03-30 1995-10-04 AT&T Corp. Apparatus comprising field emitters
US5552659A (en) * 1994-06-29 1996-09-03 Silicon Video Corporation Structure and fabrication of gated electron-emitting device having electron optics to reduce electron-beam divergence
US5607335A (en) * 1994-06-29 1997-03-04 Silicon Video Corporation Fabrication of electron-emitting structures using charged-particle tracks and removal of emitter material
US5629583A (en) * 1994-07-25 1997-05-13 Fed Corporation Flat panel display assembly comprising photoformed spacer structure, and method of making the same
US5698933A (en) * 1994-07-25 1997-12-16 Motorola, Inc. Field emission device current control apparatus and method
JP2735009B2 (ja) * 1994-10-27 1998-04-02 日本電気株式会社 電界放出型電子銃の製造方法
US5623180A (en) * 1994-10-31 1997-04-22 Lucent Technologies Inc. Electron field emitters comprising particles cooled with low voltage emitting material
US5628659A (en) * 1995-04-24 1997-05-13 Microelectronics And Computer Corporation Method of making a field emission electron source with random micro-tip structures
US6296740B1 (en) 1995-04-24 2001-10-02 Si Diamond Technology, Inc. Pretreatment process for a surface texturing process
US5688158A (en) * 1995-08-24 1997-11-18 Fed Corporation Planarizing process for field emitter displays and other electron source applications
US5828288A (en) * 1995-08-24 1998-10-27 Fed Corporation Pedestal edge emitter and non-linear current limiters for field emitter displays and other electron source applications
US5844351A (en) * 1995-08-24 1998-12-01 Fed Corporation Field emitter device, and veil process for THR fabrication thereof
US5637539A (en) * 1996-01-16 1997-06-10 Cornell Research Foundation, Inc. Vacuum microelectronic devices with multiple planar electrodes
US5641706A (en) * 1996-01-18 1997-06-24 Micron Display Technology, Inc. Method for formation of a self-aligned N-well for isolated field emission devices
US5766446A (en) * 1996-03-05 1998-06-16 Candescent Technologies Corporation Electrochemical removal of material, particularly excess emitter material in electron-emitting device
US5893967A (en) * 1996-03-05 1999-04-13 Candescent Technologies Corporation Impedance-assisted electrochemical removal of material, particularly excess emitter material in electron-emitting device
US6187603B1 (en) 1996-06-07 2001-02-13 Candescent Technologies Corporation Fabrication of gated electron-emitting devices utilizing distributed particles to define gate openings, typically in combination with lift-off of excess emitter material
US5865659A (en) * 1996-06-07 1999-02-02 Candescent Technologies Corporation Fabrication of gated electron-emitting device utilizing distributed particles to define gate openings and utilizing spacer material to control spacing between gate layer and electron-emissive elements
US5755944A (en) * 1996-06-07 1998-05-26 Candescent Technologies Corporation Formation of layer having openings produced by utilizing particles deposited under influence of electric field
US5865657A (en) * 1996-06-07 1999-02-02 Candescent Technologies Corporation Fabrication of gated electron-emitting device utilizing distributed particles to form gate openings typically beveled and/or combined with lift-off or electrochemical removal of excess emitter material
JP3441312B2 (ja) * 1996-09-18 2003-09-02 株式会社東芝 電界放出型冷陰極装置及びその製造方法
US6022256A (en) * 1996-11-06 2000-02-08 Micron Display Technology, Inc. Field emission display and method of making same
US5828163A (en) * 1997-01-13 1998-10-27 Fed Corporation Field emitter device with a current limiter structure
US6120674A (en) * 1997-06-30 2000-09-19 Candescent Technologies Corporation Electrochemical removal of material in electron-emitting device
US6091190A (en) * 1997-07-28 2000-07-18 Motorola, Inc. Field emission device
JP2000021287A (ja) 1998-06-30 2000-01-21 Sharp Corp 電界放出型電子源及びその製造方法
JP2000243218A (ja) * 1999-02-17 2000-09-08 Nec Corp 電子放出装置及びその駆動方法
TW483025B (en) * 2000-10-24 2002-04-11 Nat Science Council Formation method of metal tip electrode field emission structure
KR100706513B1 (ko) * 2001-04-11 2007-04-11 엘지전자 주식회사 전계방출소자
WO2007091366A1 (ja) * 2006-02-09 2007-08-16 Murata Manufacturing Co., Ltd. イオン発生器
CA2670749A1 (en) * 2006-12-05 2008-06-12 Landec Corporation Drug delivery
CN101465254B (zh) * 2007-12-19 2010-12-08 北京富纳特创新科技有限公司 热发射电子源及其制备方法
JP4458380B2 (ja) 2008-09-03 2010-04-28 キヤノン株式会社 電子放出素子およびそれを用いた画像表示パネル、画像表示装置並びに情報表示装置
DE102008049654A1 (de) 2008-09-30 2010-04-08 Carl Zeiss Nts Gmbh Elektronenstrahlquelle und Verfahren zur Herstellung derselben
JP2010157489A (ja) 2008-12-02 2010-07-15 Canon Inc 電子放出素子の製造方法および画像表示装置の製造方法
JP2010157490A (ja) 2008-12-02 2010-07-15 Canon Inc 電子放出素子および該電子放出素子を用いた表示パネル
JP2010174331A (ja) * 2009-01-29 2010-08-12 Canon Inc 硼化物膜の製造方法及び電子放出素子の製造方法
JP2010177029A (ja) * 2009-01-29 2010-08-12 Canon Inc 電子放出素子の製造方法及び硼化ランタン膜の製造方法
US8536773B2 (en) * 2011-03-30 2013-09-17 Carl Zeiss Microscopy Gmbh Electron beam source and method of manufacturing the same
US9852870B2 (en) * 2011-05-23 2017-12-26 Corporation For National Research Initiatives Method for the fabrication of electron field emission devices including carbon nanotube field electron emisson devices
US9196447B2 (en) 2012-12-04 2015-11-24 Massachusetts Institutes Of Technology Self-aligned gated emitter tip arrays
US9748071B2 (en) 2013-02-05 2017-08-29 Massachusetts Institute Of Technology Individually switched field emission arrays
US9053890B2 (en) 2013-08-02 2015-06-09 University Health Network Nanostructure field emission cathode structure and method for making
US10832885B2 (en) 2015-12-23 2020-11-10 Massachusetts Institute Of Technology Electron transparent membrane for cold cathode devices
US11114272B2 (en) * 2019-09-25 2021-09-07 Fei Company Pulsed CFE electron source with fast blanker for ultrafast TEM applications

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3453478A (en) * 1966-05-31 1969-07-01 Stanford Research Inst Needle-type electron source
US3500102A (en) * 1967-05-15 1970-03-10 Us Army Thin electron tube with electron emitters at intersections of crossed conductors
US3755704A (en) * 1970-02-06 1973-08-28 Stanford Research Inst Field emission cathode structures and devices utilizing such structures
US3665241A (en) * 1970-07-13 1972-05-23 Stanford Research Inst Field ionizer and field emission cathode structures and methods of production
US3671798A (en) * 1970-12-11 1972-06-20 Nasa Method and apparatus for limiting field-emission current
US3814968A (en) * 1972-02-11 1974-06-04 Lucas Industries Ltd Solid state radiation sensitive field electron emitter and methods of fabrication thereof
JPS4889678A (US20050065096A1-20050324-C00069.png) * 1972-02-25 1973-11-22
US3970887A (en) * 1974-06-19 1976-07-20 Micro-Bit Corporation Micro-structure field emission electron source
US3921022A (en) * 1974-09-03 1975-11-18 Rca Corp Field emitting device and method of making same

Also Published As

Publication number Publication date
JPS5121471A (US20050065096A1-20050324-C00069.png) 1976-02-20
DE2536363A1 (de) 1976-02-26
DE2536363C3 (de) 1979-07-12
US4008412A (en) 1977-02-15
DE2536363B2 (de) 1978-11-09

Similar Documents

Publication Publication Date Title
FR2288434B3 (US20050065096A1-20050324-C00069.png)
AR199810A1 (US20050065096A1-20050324-C00069.png)
CH564999A5 (US20050065096A1-20050324-C00069.png)
CH578712A5 (US20050065096A1-20050324-C00069.png)
BG19668A1 (US20050065096A1-20050324-C00069.png)
BG19764A1 (US20050065096A1-20050324-C00069.png)
BG20660A1 (US20050065096A1-20050324-C00069.png)
BG20668A2 (US20050065096A1-20050324-C00069.png)
BG20937A1 (US20050065096A1-20050324-C00069.png)
BG20947A1 (US20050065096A1-20050324-C00069.png)
BG20994A1 (US20050065096A1-20050324-C00069.png)
BG21067A1 (US20050065096A1-20050324-C00069.png)
BG21312A1 (US20050065096A1-20050324-C00069.png)
BG21341A1 (US20050065096A1-20050324-C00069.png)
BG21690A2 (US20050065096A1-20050324-C00069.png)
BG21760A1 (US20050065096A1-20050324-C00069.png)
CH575806A5 (US20050065096A1-20050324-C00069.png)
BG22084A3 (US20050065096A1-20050324-C00069.png)
BG22667A1 (US20050065096A1-20050324-C00069.png)
BG26365A3 (US20050065096A1-20050324-C00069.png)
BG26517A4 (US20050065096A1-20050324-C00069.png)
CH1378974A4 (US20050065096A1-20050324-C00069.png)
CH1666774A4 (US20050065096A1-20050324-C00069.png)
CH532175A4 (US20050065096A1-20050324-C00069.png)
BG22061A3 (US20050065096A1-20050324-C00069.png)