JPS5428576A - Semiconductor nonvolatile memory device - Google Patents

Semiconductor nonvolatile memory device

Info

Publication number
JPS5428576A
JPS5428576A JP9376977A JP9376977A JPS5428576A JP S5428576 A JPS5428576 A JP S5428576A JP 9376977 A JP9376977 A JP 9376977A JP 9376977 A JP9376977 A JP 9376977A JP S5428576 A JPS5428576 A JP S5428576A
Authority
JP
Japan
Prior art keywords
nonvolatile memory
memory device
semiconductor nonvolatile
trap
writing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9376977A
Other languages
Japanese (ja)
Inventor
Shinpei Tsuchiya
Takashi Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP9376977A priority Critical patent/JPS5428576A/en
Publication of JPS5428576A publication Critical patent/JPS5428576A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Non-Volatile Memory (AREA)

Abstract

PURPOSE:To obtain a nonvolatile memory which needs no high voltage for writing by securing a uniform injection of the hot carrier due to the sloping effect into the trap within the gate insulating film.
JP9376977A 1977-08-05 1977-08-05 Semiconductor nonvolatile memory device Pending JPS5428576A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9376977A JPS5428576A (en) 1977-08-05 1977-08-05 Semiconductor nonvolatile memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9376977A JPS5428576A (en) 1977-08-05 1977-08-05 Semiconductor nonvolatile memory device

Publications (1)

Publication Number Publication Date
JPS5428576A true JPS5428576A (en) 1979-03-03

Family

ID=14091624

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9376977A Pending JPS5428576A (en) 1977-08-05 1977-08-05 Semiconductor nonvolatile memory device

Country Status (1)

Country Link
JP (1) JPS5428576A (en)

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