JPS54162978A - Manufacture of semicinductor device - Google Patents
Manufacture of semicinductor deviceInfo
- Publication number
- JPS54162978A JPS54162978A JP7152378A JP7152378A JPS54162978A JP S54162978 A JPS54162978 A JP S54162978A JP 7152378 A JP7152378 A JP 7152378A JP 7152378 A JP7152378 A JP 7152378A JP S54162978 A JPS54162978 A JP S54162978A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- mask
- substrate
- sio
- buried layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract 3
- 230000003647 oxidation Effects 0.000 abstract 3
- 238000007254 oxidation reaction Methods 0.000 abstract 3
- 239000000377 silicon dioxide Substances 0.000 abstract 3
- 229910052682 stishovite Inorganic materials 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 229910052905 tridymite Inorganic materials 0.000 abstract 3
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 230000002708 enhancing effect Effects 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Landscapes
- Element Separation (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7152378A JPS54162978A (en) | 1978-06-15 | 1978-06-15 | Manufacture of semicinductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7152378A JPS54162978A (en) | 1978-06-15 | 1978-06-15 | Manufacture of semicinductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS54162978A true JPS54162978A (en) | 1979-12-25 |
| JPS5710573B2 JPS5710573B2 (enrdf_load_stackoverflow) | 1982-02-26 |
Family
ID=13463162
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7152378A Granted JPS54162978A (en) | 1978-06-15 | 1978-06-15 | Manufacture of semicinductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54162978A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6116547A (ja) * | 1984-05-09 | 1986-01-24 | テキサス インスツルメンツ インコ−ポレイテツド | Mosトランジスタの製法 |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01150275U (enrdf_load_stackoverflow) * | 1988-04-08 | 1989-10-17 | ||
| JPH01150276U (enrdf_load_stackoverflow) * | 1988-04-08 | 1989-10-17 |
-
1978
- 1978-06-15 JP JP7152378A patent/JPS54162978A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6116547A (ja) * | 1984-05-09 | 1986-01-24 | テキサス インスツルメンツ インコ−ポレイテツド | Mosトランジスタの製法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5710573B2 (enrdf_load_stackoverflow) | 1982-02-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS567463A (en) | Semiconductor device and its manufacture | |
| US3913124A (en) | Integrated semiconductor transistor structure with epitaxial contact to the buried sub-collector including fabrication method therefor | |
| US4372033A (en) | Method of making coplanar MOS IC structures | |
| IE833068L (en) | Producing a semiconductor device having isolation regions¹between elements | |
| JPS54154977A (en) | Semiconductor device and its manufacture | |
| JPS54162978A (en) | Manufacture of semicinductor device | |
| JPS5587429A (en) | Manufacture of semiconductor device | |
| JPH0648690B2 (ja) | 半導体装置の製造方法 | |
| JPS5553461A (en) | Manufacture of semiconductor device | |
| JPS5583267A (en) | Method of fabricating semiconductor device | |
| JPS55108767A (en) | Semiconductor device and manufacture of the same | |
| JPS54102980A (en) | Mos-type semiconductor device and its manufacture | |
| JPS54158889A (en) | Manufacture of semiconductor device | |
| KR940009577B1 (ko) | 반도체장치의 소자분리방법 | |
| JPS5596652A (en) | Method of fabricating semiconductor device | |
| JPS6211504B2 (enrdf_load_stackoverflow) | ||
| JPS5640256A (en) | Manufacture of semiconductor device | |
| JPS5578568A (en) | Manufacture of semiconductor device | |
| JPS5559738A (en) | Preparation of semiconductor device | |
| GB1503223A (en) | Formation of buried layers in a substrate | |
| JPS5475282A (en) | Manufacture of semiconductor device | |
| JPS5615077A (en) | Manufacture of semiconductor device | |
| JPS5534455A (en) | Integrated circuit of semiconductor | |
| JPS5516412A (en) | Semiconductor device | |
| JPS5562748A (en) | Method of fabricating semiconductor device |