JPS54150971A - Liquid-phase epitaxial growth method for semiconductor element - Google Patents

Liquid-phase epitaxial growth method for semiconductor element

Info

Publication number
JPS54150971A
JPS54150971A JP5886578A JP5886578A JPS54150971A JP S54150971 A JPS54150971 A JP S54150971A JP 5886578 A JP5886578 A JP 5886578A JP 5886578 A JP5886578 A JP 5886578A JP S54150971 A JPS54150971 A JP S54150971A
Authority
JP
Japan
Prior art keywords
substrate
aperture
impurity
hole
density
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5886578A
Other languages
English (en)
Inventor
Yoshio Iizuka
Tsuneo Furukawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP5886578A priority Critical patent/JPS54150971A/ja
Publication of JPS54150971A publication Critical patent/JPS54150971A/ja
Pending legal-status Critical Current

Links

Landscapes

  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP5886578A 1978-05-19 1978-05-19 Liquid-phase epitaxial growth method for semiconductor element Pending JPS54150971A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5886578A JPS54150971A (en) 1978-05-19 1978-05-19 Liquid-phase epitaxial growth method for semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5886578A JPS54150971A (en) 1978-05-19 1978-05-19 Liquid-phase epitaxial growth method for semiconductor element

Publications (1)

Publication Number Publication Date
JPS54150971A true JPS54150971A (en) 1979-11-27

Family

ID=13096611

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5886578A Pending JPS54150971A (en) 1978-05-19 1978-05-19 Liquid-phase epitaxial growth method for semiconductor element

Country Status (1)

Country Link
JP (1) JPS54150971A (ja)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4944517U (ja) * 1972-07-21 1974-04-19
JPS5081677A (ja) * 1973-11-15 1975-07-02
JPS51111476A (en) * 1975-03-26 1976-10-01 Sumitomo Electric Ind Ltd Method of liquid phase epitaxial crystal growth

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4944517U (ja) * 1972-07-21 1974-04-19
JPS5081677A (ja) * 1973-11-15 1975-07-02
JPS51111476A (en) * 1975-03-26 1976-10-01 Sumitomo Electric Ind Ltd Method of liquid phase epitaxial crystal growth

Similar Documents

Publication Publication Date Title
Panish et al. Photoluminescence and solution growth of gallium arsenide
JPS54150971A (en) Liquid-phase epitaxial growth method for semiconductor element
JPS5596629A (en) Method of epitaxially growing in liquid phase
JPS5577131A (en) Vapor phase growth of compound semiconductor epitaxial film
JPS54106169A (en) Vapor epitaxial growth device
SU639358A1 (ru) Способ получени р-п структур
JPS5659696A (en) Liquid phase epitaxial growing apparatus
JPS5575272A (en) Solar battery
JPS5737823A (en) Vapor phase growth device
JPS5577130A (en) Gaseous phase growing method of semiconductor epitaxial film of low carrier-density compound
GB1027159A (en) Improvements in or relating to processes for the production of ribbon-shaped dendrites of semiconductor material
JPS5574195A (en) Manufacturing semiconductor laser
JPS54133889A (en) Manufacture of gallium-phosphide green luminous element
JPS5683933A (en) Liquid phase epitaxial growth
JPS5734099A (en) Epitaxial growth of liquid phase
JPS551137A (en) Gaseous phase epitaxial breeding of monocrystalline layer of gallium arsenate
JPS57200297A (en) Preparation of gaas single crystal with low dislocation density
JIYUNICHI et al. Manufacture of semiconductor heterojunction photoelectric device
JPS5556624A (en) Aqueous phase epitaxial growing method
JPS57123898A (en) Preparation of semi-insulating gaas single crystal
JPS5373A (en) Vapor growing method for semiconductor single crystal
JPS5711898A (en) Liquid-phase epitaxial growth
JPS54162451A (en) Heat treatment method of compound semiconductor and its heat treatment unit
GERTNER Producible alternative to CdTe for epitaxy(PACE-2) of LWIR HgCdTe[Semiannual Technical Report, 1 Aug.- 31 Dec. 1983]
JPS5559739A (en) Diving method of semiconductor wafer