JPS54140881A - Semiconductor dvice - Google Patents

Semiconductor dvice

Info

Publication number
JPS54140881A
JPS54140881A JP4894578A JP4894578A JPS54140881A JP S54140881 A JPS54140881 A JP S54140881A JP 4894578 A JP4894578 A JP 4894578A JP 4894578 A JP4894578 A JP 4894578A JP S54140881 A JPS54140881 A JP S54140881A
Authority
JP
Japan
Prior art keywords
diode
thin film
film
overvoltage
fet22
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4894578A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6146987B2 (enrdf_load_stackoverflow
Inventor
Kenji Tokuyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP4894578A priority Critical patent/JPS54140881A/ja
Publication of JPS54140881A publication Critical patent/JPS54140881A/ja
Publication of JPS6146987B2 publication Critical patent/JPS6146987B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Amplifiers (AREA)
JP4894578A 1978-04-24 1978-04-24 Semiconductor dvice Granted JPS54140881A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4894578A JPS54140881A (en) 1978-04-24 1978-04-24 Semiconductor dvice

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4894578A JPS54140881A (en) 1978-04-24 1978-04-24 Semiconductor dvice

Publications (2)

Publication Number Publication Date
JPS54140881A true JPS54140881A (en) 1979-11-01
JPS6146987B2 JPS6146987B2 (enrdf_load_stackoverflow) 1986-10-16

Family

ID=12817405

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4894578A Granted JPS54140881A (en) 1978-04-24 1978-04-24 Semiconductor dvice

Country Status (1)

Country Link
JP (1) JPS54140881A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4492974A (en) * 1981-02-27 1985-01-08 Hitachi, Ltd. DMOS With gate protection diode formed over base region
US4589970A (en) * 1983-08-24 1986-05-20 Cordis Europa N.V. Apparatus for selectively measuring ions in a liquid
US5833824A (en) * 1996-11-15 1998-11-10 Rosemount Analytical Inc. Dorsal substrate guarded ISFET sensor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4492974A (en) * 1981-02-27 1985-01-08 Hitachi, Ltd. DMOS With gate protection diode formed over base region
US4589970A (en) * 1983-08-24 1986-05-20 Cordis Europa N.V. Apparatus for selectively measuring ions in a liquid
US5833824A (en) * 1996-11-15 1998-11-10 Rosemount Analytical Inc. Dorsal substrate guarded ISFET sensor

Also Published As

Publication number Publication date
JPS6146987B2 (enrdf_load_stackoverflow) 1986-10-16

Similar Documents

Publication Publication Date Title
JPS54140881A (en) Semiconductor dvice
JPS562672A (en) Schottky barrier diode
JPS5691477A (en) Semiconductor
JPS55117281A (en) 3[5 group compound semiconductor hetero structure mosfet
JPS5654064A (en) Semiconductor device
JPS5548958A (en) Semiconductor device
JPS57103355A (en) Mos semiconductor device
JPS5690565A (en) Schottky barrier diode
JPS5539636A (en) Composite semiconductor
JPS57187947A (en) Electrostatic chuck
JPS5720476A (en) Diode
JPS556847A (en) Semiconductor device
JPS57130476A (en) Semiconductor device
JPS6465870A (en) Semiconductor element of silicon carbide
GB1031976A (en) Contacting semiconductor bodies
JPS5676576A (en) Semiconductor device and manufacture thereof
JPS57114281A (en) Mos type transistor
JPS6489358A (en) Compound semiconductor device
JPS57103356A (en) Mos semiconductor device
JPS5768078A (en) Normally off type field effect transistor
JPS56101779A (en) Schottky barrier diode
JPS57197869A (en) Semiconductor device
JPS55103769A (en) Input protection device for semiconductor device
GB969530A (en) A tunnel diode
JPS55125646A (en) Semiconductor device