JPS54140875A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS54140875A JPS54140875A JP4895078A JP4895078A JPS54140875A JP S54140875 A JPS54140875 A JP S54140875A JP 4895078 A JP4895078 A JP 4895078A JP 4895078 A JP4895078 A JP 4895078A JP S54140875 A JPS54140875 A JP S54140875A
- Authority
- JP
- Japan
- Prior art keywords
- region
- emitter
- type
- conduction type
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
- H10D10/01—Manufacture or treatment
- H10D10/051—Manufacture or treatment of vertical BJTs
- H10D10/056—Manufacture or treatment of vertical BJTs of vertical BJTs having the main current going through the whole substrate, e.g. power BJTs
- H10D10/058—Manufacture or treatment of vertical BJTs of vertical BJTs having the main current going through the whole substrate, e.g. power BJTs having multi-emitter structures, e.g. interdigitated, multi-cellular or distributed emitters
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/133—Emitter regions of BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
- H10D84/121—BJTs having built-in components
- H10D84/125—BJTs having built-in components the built-in components being resistive elements, e.g. BJT having a built-in ballasting resistor
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/914—Polysilicon containing oxygen, nitrogen, or carbon, e.g. sipos
Landscapes
- Bipolar Transistors (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4895078A JPS54140875A (en) | 1978-04-24 | 1978-04-24 | Semiconductor device |
US06/032,821 US4266236A (en) | 1978-04-24 | 1979-04-24 | Transistor having emitter resistors for stabilization at high power operation |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4895078A JPS54140875A (en) | 1978-04-24 | 1978-04-24 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54140875A true JPS54140875A (en) | 1979-11-01 |
Family
ID=12817546
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4895078A Pending JPS54140875A (en) | 1978-04-24 | 1978-04-24 | Semiconductor device |
Country Status (2)
Country | Link |
---|---|
US (1) | US4266236A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
JP (1) | JPS54140875A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54120587A (en) * | 1978-03-10 | 1979-09-19 | Fujitsu Ltd | Transistor |
DE3017750C2 (de) * | 1980-05-09 | 1985-03-07 | Philips Patentverwaltung Gmbh, 2000 Hamburg | Halbleiterbauelement vom Planar-Epitaxial-Typ mit mindestens einem bipolaren Leistungstransistor |
US4411708A (en) * | 1980-08-25 | 1983-10-25 | Trw Inc. | Method of making precision doped polysilicon vertical ballast resistors by multiple implantations |
GB2175441B (en) * | 1985-05-03 | 1989-05-10 | Texas Instruments Ltd | Power bipolar transistor |
JPH07118621B2 (ja) * | 1985-08-08 | 1995-12-18 | シ−メンス、アクチエンゲゼルシヤフト | パワ−トランジスタ装置 |
GB2211988B (en) * | 1987-11-03 | 1992-04-01 | Stc Plc | Current matching of bipolar transistors |
US5204735A (en) * | 1988-04-21 | 1993-04-20 | Kabushiki Kaisha Toshiba | High-frequency semiconductor device having emitter stabilizing resistor and method of manufacturing the same |
JPH0262048A (ja) * | 1988-08-27 | 1990-03-01 | Fuji Electric Co Ltd | トランジスタ |
US5378922A (en) * | 1992-09-30 | 1995-01-03 | Rockwell International Corporation | HBT with semiconductor ballasting |
US7795047B1 (en) * | 2004-12-17 | 2010-09-14 | National Semiconductor Corporation | Current balancing in NPN BJT and BSCR snapback devices |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3358197A (en) * | 1963-05-22 | 1967-12-12 | Itt | Semiconductor device |
US3519898A (en) * | 1967-01-31 | 1970-07-07 | Nippon Electric Co | High power semiconductor device having a plurality of emitter regions |
US3918080A (en) * | 1968-06-21 | 1975-11-04 | Philips Corp | Multiemitter transistor with continuous ballast resistor |
US3619741A (en) * | 1969-11-24 | 1971-11-09 | Texas Instruments Inc | Method of providing integrated diffused emitter ballast resistors for improved power capabilities of semiconductor devices |
JPS4840307B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1970-06-12 | 1973-11-29 | ||
US3740621A (en) * | 1971-08-30 | 1973-06-19 | Rca Corp | Transistor employing variable resistance ballasting means dependent on the magnitude of the emitter current |
US3769561A (en) * | 1972-02-24 | 1973-10-30 | Us Navy | Current limiting integrated circuit |
DE2251727A1 (de) * | 1972-10-21 | 1974-04-25 | Licentia Gmbh | Halbleiteranordnung mit mindestens zwei zonen entgegengesetzten leitfaehigkeitstyps |
US3858234A (en) * | 1973-01-08 | 1974-12-31 | Motorola Inc | Transistor having improved safe operating area |
US3936863A (en) * | 1974-09-09 | 1976-02-03 | Rca Corporation | Integrated power transistor with ballasting resistance and breakdown protection |
-
1978
- 1978-04-24 JP JP4895078A patent/JPS54140875A/ja active Pending
-
1979
- 1979-04-24 US US06/032,821 patent/US4266236A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US4266236B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1983-10-11 |
US4266236A (en) | 1981-05-05 |
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