JPS54140875A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS54140875A
JPS54140875A JP4895078A JP4895078A JPS54140875A JP S54140875 A JPS54140875 A JP S54140875A JP 4895078 A JP4895078 A JP 4895078A JP 4895078 A JP4895078 A JP 4895078A JP S54140875 A JPS54140875 A JP S54140875A
Authority
JP
Japan
Prior art keywords
region
emitter
type
conduction type
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4895078A
Other languages
English (en)
Japanese (ja)
Inventor
Kazuyoshi Ueda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP4895078A priority Critical patent/JPS54140875A/ja
Priority to US06/032,821 priority patent/US4266236A/en
Publication of JPS54140875A publication Critical patent/JPS54140875A/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00Bipolar junction transistors [BJT]
    • H10D10/01Manufacture or treatment
    • H10D10/051Manufacture or treatment of vertical BJTs
    • H10D10/056Manufacture or treatment of vertical BJTs of vertical BJTs having the main current going through the whole substrate, e.g. power BJTs
    • H10D10/058Manufacture or treatment of vertical BJTs of vertical BJTs having the main current going through the whole substrate, e.g. power BJTs having multi-emitter structures, e.g. interdigitated, multi-cellular or distributed emitters
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133Emitter regions of BJTs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/121BJTs having built-in components
    • H10D84/125BJTs having built-in components the built-in components being resistive elements, e.g. BJT having a built-in ballasting resistor
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/914Polysilicon containing oxygen, nitrogen, or carbon, e.g. sipos

Landscapes

  • Bipolar Transistors (AREA)
JP4895078A 1978-04-24 1978-04-24 Semiconductor device Pending JPS54140875A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP4895078A JPS54140875A (en) 1978-04-24 1978-04-24 Semiconductor device
US06/032,821 US4266236A (en) 1978-04-24 1979-04-24 Transistor having emitter resistors for stabilization at high power operation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4895078A JPS54140875A (en) 1978-04-24 1978-04-24 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS54140875A true JPS54140875A (en) 1979-11-01

Family

ID=12817546

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4895078A Pending JPS54140875A (en) 1978-04-24 1978-04-24 Semiconductor device

Country Status (2)

Country Link
US (1) US4266236A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS54140875A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54120587A (en) * 1978-03-10 1979-09-19 Fujitsu Ltd Transistor
DE3017750C2 (de) * 1980-05-09 1985-03-07 Philips Patentverwaltung Gmbh, 2000 Hamburg Halbleiterbauelement vom Planar-Epitaxial-Typ mit mindestens einem bipolaren Leistungstransistor
US4411708A (en) * 1980-08-25 1983-10-25 Trw Inc. Method of making precision doped polysilicon vertical ballast resistors by multiple implantations
GB2175441B (en) * 1985-05-03 1989-05-10 Texas Instruments Ltd Power bipolar transistor
JPH07118621B2 (ja) * 1985-08-08 1995-12-18 シ−メンス、アクチエンゲゼルシヤフト パワ−トランジスタ装置
GB2211988B (en) * 1987-11-03 1992-04-01 Stc Plc Current matching of bipolar transistors
US5204735A (en) * 1988-04-21 1993-04-20 Kabushiki Kaisha Toshiba High-frequency semiconductor device having emitter stabilizing resistor and method of manufacturing the same
JPH0262048A (ja) * 1988-08-27 1990-03-01 Fuji Electric Co Ltd トランジスタ
US5378922A (en) * 1992-09-30 1995-01-03 Rockwell International Corporation HBT with semiconductor ballasting
US7795047B1 (en) * 2004-12-17 2010-09-14 National Semiconductor Corporation Current balancing in NPN BJT and BSCR snapback devices

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3358197A (en) * 1963-05-22 1967-12-12 Itt Semiconductor device
US3519898A (en) * 1967-01-31 1970-07-07 Nippon Electric Co High power semiconductor device having a plurality of emitter regions
US3918080A (en) * 1968-06-21 1975-11-04 Philips Corp Multiemitter transistor with continuous ballast resistor
US3619741A (en) * 1969-11-24 1971-11-09 Texas Instruments Inc Method of providing integrated diffused emitter ballast resistors for improved power capabilities of semiconductor devices
JPS4840307B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1970-06-12 1973-11-29
US3740621A (en) * 1971-08-30 1973-06-19 Rca Corp Transistor employing variable resistance ballasting means dependent on the magnitude of the emitter current
US3769561A (en) * 1972-02-24 1973-10-30 Us Navy Current limiting integrated circuit
DE2251727A1 (de) * 1972-10-21 1974-04-25 Licentia Gmbh Halbleiteranordnung mit mindestens zwei zonen entgegengesetzten leitfaehigkeitstyps
US3858234A (en) * 1973-01-08 1974-12-31 Motorola Inc Transistor having improved safe operating area
US3936863A (en) * 1974-09-09 1976-02-03 Rca Corporation Integrated power transistor with ballasting resistance and breakdown protection

Also Published As

Publication number Publication date
US4266236B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1983-10-11
US4266236A (en) 1981-05-05

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