JPS54140873A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS54140873A
JPS54140873A JP4894778A JP4894778A JPS54140873A JP S54140873 A JPS54140873 A JP S54140873A JP 4894778 A JP4894778 A JP 4894778A JP 4894778 A JP4894778 A JP 4894778A JP S54140873 A JPS54140873 A JP S54140873A
Authority
JP
Japan
Prior art keywords
film
pent roof
opening part
molecular film
molecular
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4894778A
Other languages
Japanese (ja)
Inventor
Masahiko Nakamae
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP4894778A priority Critical patent/JPS54140873A/en
Publication of JPS54140873A publication Critical patent/JPS54140873A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To prevent the discontinuance of a film and an decrease in film thickness from occurring at the circumference of an opening part of a semionductor device with a multi-layer film by removing a pent roof produced at the time when the opening part is provided penetrating several superposed films.
CONSTITUTION: After SiO2 film 12 and Si3N4 fim 13 are provided onto the surface of Si substrate 11, an opending is made by photoetching and pent roof 13' is formed. Next, high-molecular film 16 is adhered to the surface and a heat treatment is done to give strength. After pressure 17 is applied to the surface of high-molecular film 16 to break off pent roof 13', high-molecular film 16 is removed by an organic solvent, etc., so that broken pent roof 13' will also be removed.
COPYRIGHT: (C)1979,JPO&Japio
JP4894778A 1978-04-24 1978-04-24 Manufacture of semiconductor device Pending JPS54140873A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4894778A JPS54140873A (en) 1978-04-24 1978-04-24 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4894778A JPS54140873A (en) 1978-04-24 1978-04-24 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS54140873A true JPS54140873A (en) 1979-11-01

Family

ID=12817461

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4894778A Pending JPS54140873A (en) 1978-04-24 1978-04-24 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS54140873A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08273415A (en) * 1996-05-07 1996-10-18 Toshiba Lighting & Technol Corp Light source with reflector

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08273415A (en) * 1996-05-07 1996-10-18 Toshiba Lighting & Technol Corp Light source with reflector

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