JPS54137983A - Manufacture of mos semiconductor device - Google Patents

Manufacture of mos semiconductor device

Info

Publication number
JPS54137983A
JPS54137983A JP4611878A JP4611878A JPS54137983A JP S54137983 A JPS54137983 A JP S54137983A JP 4611878 A JP4611878 A JP 4611878A JP 4611878 A JP4611878 A JP 4611878A JP S54137983 A JPS54137983 A JP S54137983A
Authority
JP
Japan
Prior art keywords
film
poly
oxidized
thin
oxidized film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4611878A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6135711B2 (enExample
Inventor
Keizo Sakiyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP4611878A priority Critical patent/JPS54137983A/ja
Publication of JPS54137983A publication Critical patent/JPS54137983A/ja
Publication of JPS6135711B2 publication Critical patent/JPS6135711B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels

Landscapes

  • Non-Volatile Memory (AREA)
JP4611878A 1978-04-18 1978-04-18 Manufacture of mos semiconductor device Granted JPS54137983A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4611878A JPS54137983A (en) 1978-04-18 1978-04-18 Manufacture of mos semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4611878A JPS54137983A (en) 1978-04-18 1978-04-18 Manufacture of mos semiconductor device

Publications (2)

Publication Number Publication Date
JPS54137983A true JPS54137983A (en) 1979-10-26
JPS6135711B2 JPS6135711B2 (enExample) 1986-08-14

Family

ID=12738070

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4611878A Granted JPS54137983A (en) 1978-04-18 1978-04-18 Manufacture of mos semiconductor device

Country Status (1)

Country Link
JP (1) JPS54137983A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5023681A (en) * 1988-10-08 1991-06-11 Hyundai Electronics Industries Co., Ltd. Method for arranging EEPROM cells and a semiconductor device manufactured by the method
US5599727A (en) * 1994-12-15 1997-02-04 Sharp Kabushiki Kaisha Method for producing a floating gate memory device including implanting ions through an oxidized portion of the silicon film from which the floating gate is formed

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5023681A (en) * 1988-10-08 1991-06-11 Hyundai Electronics Industries Co., Ltd. Method for arranging EEPROM cells and a semiconductor device manufactured by the method
US5599727A (en) * 1994-12-15 1997-02-04 Sharp Kabushiki Kaisha Method for producing a floating gate memory device including implanting ions through an oxidized portion of the silicon film from which the floating gate is formed

Also Published As

Publication number Publication date
JPS6135711B2 (enExample) 1986-08-14

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