JPS54137274A - Manufacture of beam lead structure semiconductor device - Google Patents

Manufacture of beam lead structure semiconductor device

Info

Publication number
JPS54137274A
JPS54137274A JP4568678A JP4568678A JPS54137274A JP S54137274 A JPS54137274 A JP S54137274A JP 4568678 A JP4568678 A JP 4568678A JP 4568678 A JP4568678 A JP 4568678A JP S54137274 A JPS54137274 A JP S54137274A
Authority
JP
Japan
Prior art keywords
substrate
groove
beam lead
electrode
lead structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4568678A
Other languages
Japanese (ja)
Other versions
JPS6151420B2 (en
Inventor
Yoichi Kuriyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP4568678A priority Critical patent/JPS54137274A/en
Publication of JPS54137274A publication Critical patent/JPS54137274A/en
Publication of JPS6151420B2 publication Critical patent/JPS6151420B2/ja
Granted legal-status Critical Current

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Abstract

PURPOSE: To secure the stabilized formation of the beam lead featuring good high- frequency characteristics by reducing one side of the device completed with use of the thick semiconductor substrate.
CONSTITUTION: The window is drilled to oxide film 2 on semiconductor substrate 1 to form Schottky junction 3, and anode and cathode lead-out electrode 4 and 5 are provided. Groove 6 is cut on the substrate backs of electrode 4 and 5 with the width equal to the length of 4 and 5 and the depth of 1/2 thickness of substrate 1. After this, groove 7 featuring the depth of more than half of the thickness of the substrate is cut from the surface of the substrate and vertically to groove 6. The uncut part is given the chemical etching, thus the Schottky diode bar of the beam lead structure being separated easily. As a result, the parasitic capacity of electrode 4 and 5 can be reduced via oxide film 2.
COPYRIGHT: (C)1979,JPO&Japio
JP4568678A 1978-04-17 1978-04-17 Manufacture of beam lead structure semiconductor device Granted JPS54137274A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4568678A JPS54137274A (en) 1978-04-17 1978-04-17 Manufacture of beam lead structure semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4568678A JPS54137274A (en) 1978-04-17 1978-04-17 Manufacture of beam lead structure semiconductor device

Publications (2)

Publication Number Publication Date
JPS54137274A true JPS54137274A (en) 1979-10-24
JPS6151420B2 JPS6151420B2 (en) 1986-11-08

Family

ID=12726264

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4568678A Granted JPS54137274A (en) 1978-04-17 1978-04-17 Manufacture of beam lead structure semiconductor device

Country Status (1)

Country Link
JP (1) JPS54137274A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105845742A (en) * 2016-05-24 2016-08-10 中国电子科技集团公司第十三研究所 Beam lead type terahertz schottky diode

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4926454A (en) * 1972-07-06 1974-03-08
JPS4987277A (en) * 1972-12-22 1974-08-21
JPS5024073A (en) * 1973-07-05 1975-03-14
JPS537797A (en) * 1976-05-15 1978-01-24 Cassella Farbwerke Mainkur Ag Water soluble or water dispersibility branched copolyester and preparation thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4926454A (en) * 1972-07-06 1974-03-08
JPS4987277A (en) * 1972-12-22 1974-08-21
JPS5024073A (en) * 1973-07-05 1975-03-14
JPS537797A (en) * 1976-05-15 1978-01-24 Cassella Farbwerke Mainkur Ag Water soluble or water dispersibility branched copolyester and preparation thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105845742A (en) * 2016-05-24 2016-08-10 中国电子科技集团公司第十三研究所 Beam lead type terahertz schottky diode
CN105845742B (en) * 2016-05-24 2023-12-19 中国电子科技集团公司第十三研究所 Beam lead terahertz Schottky diode

Also Published As

Publication number Publication date
JPS6151420B2 (en) 1986-11-08

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