JPS54131881A - Junction-type field effect transistor - Google Patents
Junction-type field effect transistorInfo
- Publication number
- JPS54131881A JPS54131881A JP3956978A JP3956978A JPS54131881A JP S54131881 A JPS54131881 A JP S54131881A JP 3956978 A JP3956978 A JP 3956978A JP 3956978 A JP3956978 A JP 3956978A JP S54131881 A JPS54131881 A JP S54131881A
- Authority
- JP
- Japan
- Prior art keywords
- gate
- layer
- density
- ion
- constitution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005669 field effect Effects 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 3
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- 238000000137 annealing Methods 0.000 abstract 1
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 229910052594 sapphire Inorganic materials 0.000 abstract 1
- 239000010980 sapphire Substances 0.000 abstract 1
Landscapes
- Bipolar Transistors (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3956978A JPS54131881A (en) | 1978-04-03 | 1978-04-03 | Junction-type field effect transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3956978A JPS54131881A (en) | 1978-04-03 | 1978-04-03 | Junction-type field effect transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS54131881A true JPS54131881A (en) | 1979-10-13 |
| JPS6117153B2 JPS6117153B2 (enrdf_load_stackoverflow) | 1986-05-06 |
Family
ID=12556698
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3956978A Granted JPS54131881A (en) | 1978-04-03 | 1978-04-03 | Junction-type field effect transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54131881A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS554912A (en) * | 1978-06-26 | 1980-01-14 | Hitachi Ltd | Fieldeffect lateral transistor |
| US4364072A (en) * | 1978-03-17 | 1982-12-14 | Zaidan Hojin Handotai Kenkyu Shinkokai | Static induction type semiconductor device with multiple doped layers for potential modification |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5520432B2 (ja) | 2006-10-03 | 2014-06-11 | 古河電気工業株式会社 | 半導体トランジスタの製造方法 |
-
1978
- 1978-04-03 JP JP3956978A patent/JPS54131881A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4364072A (en) * | 1978-03-17 | 1982-12-14 | Zaidan Hojin Handotai Kenkyu Shinkokai | Static induction type semiconductor device with multiple doped layers for potential modification |
| JPS554912A (en) * | 1978-06-26 | 1980-01-14 | Hitachi Ltd | Fieldeffect lateral transistor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6117153B2 (enrdf_load_stackoverflow) | 1986-05-06 |
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