JPS54130843A - Semiconductor memory - Google Patents
Semiconductor memoryInfo
- Publication number
- JPS54130843A JPS54130843A JP3903478A JP3903478A JPS54130843A JP S54130843 A JPS54130843 A JP S54130843A JP 3903478 A JP3903478 A JP 3903478A JP 3903478 A JP3903478 A JP 3903478A JP S54130843 A JPS54130843 A JP S54130843A
- Authority
- JP
- Japan
- Prior art keywords
- column line
- data
- turned
- semiconductor memory
- inputted
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
- G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
- G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
Landscapes
- Read Only Memory (AREA)
Abstract
PURPOSE:To make a data read time high-speed by connecting a switching element, where data opposite to column line data is inputted, in parallel to the load element, which sets the level of the column line, in the semiconductor memory. CONSTITUTION:Data detector circuit 8 outputs data opposite to column line data to turn on and off element 10 only during CS signal input, however, element 10 is floating during other periods. When column line 3o in ''1'' state is selected and a CS signal is inputted, element 10 is turned off. Next, when the row line is selected and element 4o is turned on, the state of column line 3o becomes ''0'' because charge is discharged. This discharge time is short because element 10 is turned off and only element 7 disturbs this discharge. Reversely, when the column line is ''0'', the column line charge time becomes short because element 10 is turned on.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP53039034A JPS601718B2 (en) | 1978-04-03 | 1978-04-03 | semiconductor storage device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP53039034A JPS601718B2 (en) | 1978-04-03 | 1978-04-03 | semiconductor storage device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS54130843A true JPS54130843A (en) | 1979-10-11 |
JPS601718B2 JPS601718B2 (en) | 1985-01-17 |
Family
ID=12541819
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP53039034A Expired JPS601718B2 (en) | 1978-04-03 | 1978-04-03 | semiconductor storage device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS601718B2 (en) |
-
1978
- 1978-04-03 JP JP53039034A patent/JPS601718B2/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPS601718B2 (en) | 1985-01-17 |
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