JPS54128687A - Semiconductor device and its manufacture - Google Patents

Semiconductor device and its manufacture

Info

Publication number
JPS54128687A
JPS54128687A JP3748578A JP3748578A JPS54128687A JP S54128687 A JPS54128687 A JP S54128687A JP 3748578 A JP3748578 A JP 3748578A JP 3748578 A JP3748578 A JP 3748578A JP S54128687 A JPS54128687 A JP S54128687A
Authority
JP
Japan
Prior art keywords
film
wiring
insulation film
enclosed
coated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3748578A
Other languages
Japanese (ja)
Other versions
JPS6128212B2 (en
Inventor
Masaru Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP3748578A priority Critical patent/JPS54128687A/en
Publication of JPS54128687A publication Critical patent/JPS54128687A/en
Publication of JPS6128212B2 publication Critical patent/JPS6128212B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE: To make excellent the mechanical protection and also to prevent the local charge, by constituting the surface protection film through the provision of metal film enclosed with organic resin insulation film without exposing even the circumference, on the wiring region other than the external connection terminals at the surface of semiconductor device.
CONSTITUTION: On the Si substrate 1 on which the element is formed, the insulation film 2 such as SiO2 or Si3N4 is coated, and the inner circuit wiring 3 and external connection terminal wiring 4 consisting of Ti-Pt-Au film are formed on it. Further, the polyimide film 5 and the Al film 6 being the first organic insulation film are coated on the entire surface, and the second organic resin insulation film 7 of photo resist is formed only on the region of the circuit wiring 3 surrounded with the terminal wiring 4. After that, the films 5 and 6 are etched by taking the film 7 as a mask to expose the terminal wiring 4, and the end of the Al film 6 exposed at the same time is enclosed with the lamination film of polyimide and photo resist to finish the surface protection film.
COPYRIGHT: (C)1979,JPO&Japio
JP3748578A 1978-03-30 1978-03-30 Semiconductor device and its manufacture Granted JPS54128687A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3748578A JPS54128687A (en) 1978-03-30 1978-03-30 Semiconductor device and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3748578A JPS54128687A (en) 1978-03-30 1978-03-30 Semiconductor device and its manufacture

Publications (2)

Publication Number Publication Date
JPS54128687A true JPS54128687A (en) 1979-10-05
JPS6128212B2 JPS6128212B2 (en) 1986-06-28

Family

ID=12498814

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3748578A Granted JPS54128687A (en) 1978-03-30 1978-03-30 Semiconductor device and its manufacture

Country Status (1)

Country Link
JP (1) JPS54128687A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112739722B (en) 2018-09-21 2023-08-08 东洋制罐集团控股株式会社 Nanocellulose and production method thereof

Also Published As

Publication number Publication date
JPS6128212B2 (en) 1986-06-28

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