JPS54126451A - High-stability oscillator - Google Patents

High-stability oscillator

Info

Publication number
JPS54126451A
JPS54126451A JP3437578A JP3437578A JPS54126451A JP S54126451 A JPS54126451 A JP S54126451A JP 3437578 A JP3437578 A JP 3437578A JP 3437578 A JP3437578 A JP 3437578A JP S54126451 A JPS54126451 A JP S54126451A
Authority
JP
Japan
Prior art keywords
diode
conductance
gunn diode
stability
temperature range
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3437578A
Other languages
Japanese (ja)
Inventor
Kazumi Machida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP3437578A priority Critical patent/JPS54126451A/en
Publication of JPS54126451A publication Critical patent/JPS54126451A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B9/00Generation of oscillations using transit-time effects
    • H03B9/12Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices
    • H03B9/14Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices and elements comprising distributed inductance and capacitance
    • H03B9/141Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices and elements comprising distributed inductance and capacitance and comprising a voltage sensitive element, e.g. varactor

Abstract

PURPOSE:To obtain a high-stability characteristic throughout a wide temperature range by providing a Gunn diode in a load circuit and changing the conductance in a desired proportion. CONSTITUTION:Gunn diode 7 is provided in a load circuit, and a DC voltage is applied to diode 7 through electrode terminal 8. This DC applied voltage is so applied that the conductance of diode 7 may be changed in a desired proportion for temperature change. As a result, the non-linearity of the temperature fluctuation of the susceptance of the Gunn diode can be compensated by load conductance, and high-stability micro waves and millimeter wave signal sources can be obtained throughout a very wide temperature range.
JP3437578A 1978-03-24 1978-03-24 High-stability oscillator Pending JPS54126451A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3437578A JPS54126451A (en) 1978-03-24 1978-03-24 High-stability oscillator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3437578A JPS54126451A (en) 1978-03-24 1978-03-24 High-stability oscillator

Publications (1)

Publication Number Publication Date
JPS54126451A true JPS54126451A (en) 1979-10-01

Family

ID=12412413

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3437578A Pending JPS54126451A (en) 1978-03-24 1978-03-24 High-stability oscillator

Country Status (1)

Country Link
JP (1) JPS54126451A (en)

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