JPS54125144A - Treating device using hydrogen fluoride-containing gas - Google Patents

Treating device using hydrogen fluoride-containing gas

Info

Publication number
JPS54125144A
JPS54125144A JP3286578A JP3286578A JPS54125144A JP S54125144 A JPS54125144 A JP S54125144A JP 3286578 A JP3286578 A JP 3286578A JP 3286578 A JP3286578 A JP 3286578A JP S54125144 A JPS54125144 A JP S54125144A
Authority
JP
Japan
Prior art keywords
cooled
etching
container
gas
etched
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3286578A
Other languages
English (en)
Japanese (ja)
Other versions
JPS558593B2 (enrdf_load_stackoverflow
Inventor
Masahiro Shibagaki
Yasuhiro Horiike
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP3286578A priority Critical patent/JPS54125144A/ja
Publication of JPS54125144A publication Critical patent/JPS54125144A/ja
Publication of JPS558593B2 publication Critical patent/JPS558593B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)
JP3286578A 1978-03-24 1978-03-24 Treating device using hydrogen fluoride-containing gas Granted JPS54125144A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3286578A JPS54125144A (en) 1978-03-24 1978-03-24 Treating device using hydrogen fluoride-containing gas

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3286578A JPS54125144A (en) 1978-03-24 1978-03-24 Treating device using hydrogen fluoride-containing gas

Publications (2)

Publication Number Publication Date
JPS54125144A true JPS54125144A (en) 1979-09-28
JPS558593B2 JPS558593B2 (enrdf_load_stackoverflow) 1980-03-05

Family

ID=12370739

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3286578A Granted JPS54125144A (en) 1978-03-24 1978-03-24 Treating device using hydrogen fluoride-containing gas

Country Status (1)

Country Link
JP (1) JPS54125144A (enrdf_load_stackoverflow)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5954227A (ja) * 1982-09-21 1984-03-29 Tokyo Denshi Kagaku Kabushiki 乾式パタ−ン形成方法
JPS59166675A (ja) * 1983-03-11 1984-09-20 Fujitsu Ltd エツチング装置
JPH03107479A (ja) * 1989-09-22 1991-05-07 Nec Corp ドライエッチング装置
US5173152A (en) * 1989-10-02 1992-12-22 Dainippon Screen Mfg. Co., Ltd. Method for selectively removing an insulating film
JPH07169756A (ja) * 1994-11-07 1995-07-04 Semiconductor Energy Lab Co Ltd プラズマエッチング方法
JPH08306675A (ja) * 1996-05-13 1996-11-22 Semiconductor Energy Lab Co Ltd プラズマエッチング方法
KR101874821B1 (ko) * 2016-04-05 2018-07-06 주식회사 테스 저온 공정을 이용한 실리콘산화막의 선택적 식각 방법
JP2023506400A (ja) * 2019-12-03 2023-02-16 ロベルト・ボッシュ・ゲゼルシャフト・ミト・ベシュレンクテル・ハフツング 少なくとも１つの半導体基板を処理するための装置および方法

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5954227A (ja) * 1982-09-21 1984-03-29 Tokyo Denshi Kagaku Kabushiki 乾式パタ−ン形成方法
JPS59166675A (ja) * 1983-03-11 1984-09-20 Fujitsu Ltd エツチング装置
JPH03107479A (ja) * 1989-09-22 1991-05-07 Nec Corp ドライエッチング装置
US5173152A (en) * 1989-10-02 1992-12-22 Dainippon Screen Mfg. Co., Ltd. Method for selectively removing an insulating film
JPH07169756A (ja) * 1994-11-07 1995-07-04 Semiconductor Energy Lab Co Ltd プラズマエッチング方法
JPH08306675A (ja) * 1996-05-13 1996-11-22 Semiconductor Energy Lab Co Ltd プラズマエッチング方法
KR101874821B1 (ko) * 2016-04-05 2018-07-06 주식회사 테스 저온 공정을 이용한 실리콘산화막의 선택적 식각 방법
JP2023506400A (ja) * 2019-12-03 2023-02-16 ロベルト・ボッシュ・ゲゼルシャフト・ミト・ベシュレンクテル・ハフツング 少なくとも１つの半導体基板を処理するための装置および方法

Also Published As

Publication number Publication date
JPS558593B2 (enrdf_load_stackoverflow) 1980-03-05

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