JPS54120586A - Field effect luminous device - Google Patents

Field effect luminous device

Info

Publication number
JPS54120586A
JPS54120586A JP2794178A JP2794178A JPS54120586A JP S54120586 A JPS54120586 A JP S54120586A JP 2794178 A JP2794178 A JP 2794178A JP 2794178 A JP2794178 A JP 2794178A JP S54120586 A JPS54120586 A JP S54120586A
Authority
JP
Japan
Prior art keywords
crystallized glass
layer
substrate
electrode layer
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2794178A
Other languages
Japanese (ja)
Inventor
Nobuyuki Yamamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Omron Corp
Original Assignee
Omron Tateisi Electronics Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Omron Tateisi Electronics Co filed Critical Omron Tateisi Electronics Co
Priority to JP2794178A priority Critical patent/JPS54120586A/en
Publication of JPS54120586A publication Critical patent/JPS54120586A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To improve characteristics of a field effect luminous device through a high-temperature and short-time process by using crystallized glass as a substrate and by providing an electrode layer of Si, Ge or Ti onto its surface.
CONSTITUTION: On the surface of crystallized glass substrate 1, Ge electrode layer 2 of approximate lμm and BaTiO3 insulation layer 3 of approximate 5000Å are stacked, ZnS luminous layer 4 including a little Mn is formed, and BaTiO3 5 and InO2 electrode 6 are stacked. Although a heat treatment is done in this process after the formation of luminous layer 4 in order to obtain a fixed composition ratio of ZnS, the crystallized glass of the substrate never softens and Ge constituting electrode layer 2 never changes in white, so that a high-temperature treatment can be carried out. Through a heat treatment under a high temperature, the breakdown voltage increases and its life becomes long without decreasing the brightness besides the reduction in power consumption.
COPYRIGHT: (C)1979,JPO&Japio
JP2794178A 1978-03-10 1978-03-10 Field effect luminous device Pending JPS54120586A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2794178A JPS54120586A (en) 1978-03-10 1978-03-10 Field effect luminous device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2794178A JPS54120586A (en) 1978-03-10 1978-03-10 Field effect luminous device

Publications (1)

Publication Number Publication Date
JPS54120586A true JPS54120586A (en) 1979-09-19

Family

ID=12234911

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2794178A Pending JPS54120586A (en) 1978-03-10 1978-03-10 Field effect luminous device

Country Status (1)

Country Link
JP (1) JPS54120586A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03205786A (en) * 1990-01-08 1991-09-09 Fuji Electric Co Ltd Manufacture of double insulating thin film electroluminescence device
JP2001223073A (en) * 2000-02-07 2001-08-17 Tdk Corp Composite substrate and el element using the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03205786A (en) * 1990-01-08 1991-09-09 Fuji Electric Co Ltd Manufacture of double insulating thin film electroluminescence device
JP2001223073A (en) * 2000-02-07 2001-08-17 Tdk Corp Composite substrate and el element using the same
JP4563539B2 (en) * 2000-02-07 2010-10-13 アイファイヤー アイピー コーポレイション Composite substrate and EL device using the same

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