JPS54113270A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS54113270A
JPS54113270A JP2045578A JP2045578A JPS54113270A JP S54113270 A JPS54113270 A JP S54113270A JP 2045578 A JP2045578 A JP 2045578A JP 2045578 A JP2045578 A JP 2045578A JP S54113270 A JPS54113270 A JP S54113270A
Authority
JP
Japan
Prior art keywords
region
electrode
circuit
drain
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2045578A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6210032B2 (enExample
Inventor
Toshio Wada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP2045578A priority Critical patent/JPS54113270A/ja
Publication of JPS54113270A publication Critical patent/JPS54113270A/ja
Publication of JPS6210032B2 publication Critical patent/JPS6210032B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H10D84/817—Combinations of field-effect devices and resistors only

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
JP2045578A 1978-02-23 1978-02-23 Semiconductor device Granted JPS54113270A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2045578A JPS54113270A (en) 1978-02-23 1978-02-23 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2045578A JPS54113270A (en) 1978-02-23 1978-02-23 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS54113270A true JPS54113270A (en) 1979-09-04
JPS6210032B2 JPS6210032B2 (enExample) 1987-03-04

Family

ID=12027536

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2045578A Granted JPS54113270A (en) 1978-02-23 1978-02-23 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS54113270A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59130459A (ja) * 1983-01-17 1984-07-27 Hitachi Ltd 半導体メモリ集積回路装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59130459A (ja) * 1983-01-17 1984-07-27 Hitachi Ltd 半導体メモリ集積回路装置

Also Published As

Publication number Publication date
JPS6210032B2 (enExample) 1987-03-04

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