JPS54108582A - Manufacture of silicon type field effect transistor - Google Patents
Manufacture of silicon type field effect transistorInfo
- Publication number
- JPS54108582A JPS54108582A JP1535578A JP1535578A JPS54108582A JP S54108582 A JPS54108582 A JP S54108582A JP 1535578 A JP1535578 A JP 1535578A JP 1535578 A JP1535578 A JP 1535578A JP S54108582 A JPS54108582 A JP S54108582A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- poly
- phosphorus
- mask
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 230000005669 field effect Effects 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 229910052698 phosphorus Inorganic materials 0.000 abstract 2
- 239000011574 phosphorus Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 238000001259 photo etching Methods 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H01L29/42376—
-
- H01L29/78—
Landscapes
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1535578A JPS54108582A (en) | 1978-02-15 | 1978-02-15 | Manufacture of silicon type field effect transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1535578A JPS54108582A (en) | 1978-02-15 | 1978-02-15 | Manufacture of silicon type field effect transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS54108582A true JPS54108582A (en) | 1979-08-25 |
Family
ID=11886483
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1535578A Pending JPS54108582A (en) | 1978-02-15 | 1978-02-15 | Manufacture of silicon type field effect transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54108582A (ja) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5583267A (en) * | 1978-12-20 | 1980-06-23 | Matsushita Electric Ind Co Ltd | Method of fabricating semiconductor device |
| JPS607775A (ja) * | 1983-06-27 | 1985-01-16 | Nec Corp | 半導体装置およびその製造方法 |
| JPS6344767A (ja) * | 1986-08-12 | 1988-02-25 | Mitsubishi Electric Corp | 電界効果型トランジスタ及びその製造方法 |
| JPS6344770A (ja) * | 1986-08-12 | 1988-02-25 | Mitsubishi Electric Corp | 電界効果型トランジスタの製造方法 |
| JPS6344771A (ja) * | 1986-08-12 | 1988-02-25 | Mitsubishi Electric Corp | 半導体集積回路装置及びその製造方法 |
| JPS6344768A (ja) * | 1986-08-12 | 1988-02-25 | Mitsubishi Electric Corp | 電界効果型トランジスタ及びその製造方法 |
| US5471080A (en) * | 1988-09-08 | 1995-11-28 | Mitsubishi Denki Kabushiki Kaisha | Field effect transistor with a shaped gate electrode |
| US5834817A (en) * | 1988-09-08 | 1998-11-10 | Mitsubishi Denki Kabushiki Kaisha | Field effect transistor with a shaped gate electrode |
| US7371600B2 (en) | 2001-06-13 | 2008-05-13 | Mitsubishi Denki Kabushiki Kaisha | Thin-film structure and method for manufacturing the same, and acceleration sensor and method for manufacturing the same |
| WO2023168138A1 (en) * | 2022-03-04 | 2023-09-07 | Qualcomm Incorporated | High performance device with double side contacts |
-
1978
- 1978-02-15 JP JP1535578A patent/JPS54108582A/ja active Pending
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5583267A (en) * | 1978-12-20 | 1980-06-23 | Matsushita Electric Ind Co Ltd | Method of fabricating semiconductor device |
| JPS607775A (ja) * | 1983-06-27 | 1985-01-16 | Nec Corp | 半導体装置およびその製造方法 |
| JPH0638496B2 (ja) * | 1983-06-27 | 1994-05-18 | 日本電気株式会社 | 半導体装置 |
| JPS6344767A (ja) * | 1986-08-12 | 1988-02-25 | Mitsubishi Electric Corp | 電界効果型トランジスタ及びその製造方法 |
| JPS6344770A (ja) * | 1986-08-12 | 1988-02-25 | Mitsubishi Electric Corp | 電界効果型トランジスタの製造方法 |
| JPS6344771A (ja) * | 1986-08-12 | 1988-02-25 | Mitsubishi Electric Corp | 半導体集積回路装置及びその製造方法 |
| JPS6344768A (ja) * | 1986-08-12 | 1988-02-25 | Mitsubishi Electric Corp | 電界効果型トランジスタ及びその製造方法 |
| JPH0571174B2 (ja) * | 1986-08-12 | 1993-10-06 | Mitsubishi Electric Corp | |
| US5471080A (en) * | 1988-09-08 | 1995-11-28 | Mitsubishi Denki Kabushiki Kaisha | Field effect transistor with a shaped gate electrode |
| US5834817A (en) * | 1988-09-08 | 1998-11-10 | Mitsubishi Denki Kabushiki Kaisha | Field effect transistor with a shaped gate electrode |
| US7371600B2 (en) | 2001-06-13 | 2008-05-13 | Mitsubishi Denki Kabushiki Kaisha | Thin-film structure and method for manufacturing the same, and acceleration sensor and method for manufacturing the same |
| WO2023168138A1 (en) * | 2022-03-04 | 2023-09-07 | Qualcomm Incorporated | High performance device with double side contacts |
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