JPS54102872A - Ion etching method - Google Patents

Ion etching method

Info

Publication number
JPS54102872A
JPS54102872A JP834078A JP834078A JPS54102872A JP S54102872 A JPS54102872 A JP S54102872A JP 834078 A JP834078 A JP 834078A JP 834078 A JP834078 A JP 834078A JP S54102872 A JPS54102872 A JP S54102872A
Authority
JP
Japan
Prior art keywords
chamber
voltage
discharge chamber
discharge
objective
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP834078A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6228574B2 (enExample
Inventor
Yasuhiro Horiike
Masahiro Shibagaki
Katsuo Sumino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP834078A priority Critical patent/JPS54102872A/ja
Publication of JPS54102872A publication Critical patent/JPS54102872A/ja
Publication of JPS6228574B2 publication Critical patent/JPS6228574B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)
JP834078A 1978-01-30 1978-01-30 Ion etching method Granted JPS54102872A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP834078A JPS54102872A (en) 1978-01-30 1978-01-30 Ion etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP834078A JPS54102872A (en) 1978-01-30 1978-01-30 Ion etching method

Publications (2)

Publication Number Publication Date
JPS54102872A true JPS54102872A (en) 1979-08-13
JPS6228574B2 JPS6228574B2 (enExample) 1987-06-22

Family

ID=11690465

Family Applications (1)

Application Number Title Priority Date Filing Date
JP834078A Granted JPS54102872A (en) 1978-01-30 1978-01-30 Ion etching method

Country Status (1)

Country Link
JP (1) JPS54102872A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5683942A (en) * 1979-12-12 1981-07-08 Matsushita Electronics Corp Plasma etching of poly-crystal semiconductor
JPH03162602A (ja) * 1989-08-16 1991-07-12 Internatl Business Mach Corp <Ibm> Ａｆｍ／ｓｔｍプロフィロメトリ用マイクロメカニカルセンサの製造方法
JPH07193044A (ja) * 1992-12-16 1995-07-28 Science & Tech Agency ＳｉＣのパターンエッチング方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63271694A (ja) * 1987-04-30 1988-11-09 株式会社東芝 ト−クンカ−ド
JPH01143016A (ja) * 1987-11-28 1989-06-05 Furukawa Electric Co Ltd:The 磁気・光学複合記録媒体

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52127167A (en) * 1976-04-19 1977-10-25 Fujitsu Ltd Etching method

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52127167A (en) * 1976-04-19 1977-10-25 Fujitsu Ltd Etching method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5683942A (en) * 1979-12-12 1981-07-08 Matsushita Electronics Corp Plasma etching of poly-crystal semiconductor
JPH03162602A (ja) * 1989-08-16 1991-07-12 Internatl Business Mach Corp <Ibm> Ａｆｍ／ｓｔｍプロフィロメトリ用マイクロメカニカルセンサの製造方法
JPH07193044A (ja) * 1992-12-16 1995-07-28 Science & Tech Agency ＳｉＣのパターンエッチング方法

Also Published As

Publication number Publication date
JPS6228574B2 (enExample) 1987-06-22

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