JPS54101684A - Semiconductor element - Google Patents

Semiconductor element

Info

Publication number
JPS54101684A
JPS54101684A JP856478A JP856478A JPS54101684A JP S54101684 A JPS54101684 A JP S54101684A JP 856478 A JP856478 A JP 856478A JP 856478 A JP856478 A JP 856478A JP S54101684 A JPS54101684 A JP S54101684A
Authority
JP
Japan
Prior art keywords
base
junction
auxiliary gate
current
anode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP856478A
Other languages
Japanese (ja)
Inventor
Kenichi Yamanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP856478A priority Critical patent/JPS54101684A/en
Publication of JPS54101684A publication Critical patent/JPS54101684A/en
Pending legal-status Critical Current

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  • Thyristors (AREA)

Abstract

PURPOSE: To obtain a thermo-sensitive and photosensitive switching element which the switching temperature is lowered under a good-characteristic state, by adding an auxiliary gate having a leak-property junction to a main thyristor.
CONSTITUTION: In the pnpn four-layer-structure semiconductor device consisting of anode 1, n base 2, p base 3 and cathode 4, auxiliary gate 8 which is the same conductive type as p base 3 is so added that it may be joined to n base 2 and be separated from p base 3. Then, pn junction J4 between auxiliary gate 8 and n base 2 is biased reversely, and the lead current is flowed to pn junction J1 between anode 1 and n base 2 in the forward direction. Now, when deep level or resistance layer 9 is formed in the pn junction J4 part, much leak current is generated to shift the temperature dependence of the breakover voltage to the low temperature side. As a result, the off current is small, and the change rate of the breakover voltage to peripheral temperatures is large, and the switching temperature is lowered under the state where the off voltage rise rate is good.
COPYRIGHT: (C)1979,JPO&Japio
JP856478A 1978-01-27 1978-01-27 Semiconductor element Pending JPS54101684A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP856478A JPS54101684A (en) 1978-01-27 1978-01-27 Semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP856478A JPS54101684A (en) 1978-01-27 1978-01-27 Semiconductor element

Publications (1)

Publication Number Publication Date
JPS54101684A true JPS54101684A (en) 1979-08-10

Family

ID=11696561

Family Applications (1)

Application Number Title Priority Date Filing Date
JP856478A Pending JPS54101684A (en) 1978-01-27 1978-01-27 Semiconductor element

Country Status (1)

Country Link
JP (1) JPS54101684A (en)

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