JPS54101684A - Semiconductor element - Google Patents
Semiconductor elementInfo
- Publication number
- JPS54101684A JPS54101684A JP856478A JP856478A JPS54101684A JP S54101684 A JPS54101684 A JP S54101684A JP 856478 A JP856478 A JP 856478A JP 856478 A JP856478 A JP 856478A JP S54101684 A JPS54101684 A JP S54101684A
- Authority
- JP
- Japan
- Prior art keywords
- base
- junction
- auxiliary gate
- current
- anode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Thyristors (AREA)
Abstract
PURPOSE: To obtain a thermo-sensitive and photosensitive switching element which the switching temperature is lowered under a good-characteristic state, by adding an auxiliary gate having a leak-property junction to a main thyristor.
CONSTITUTION: In the pnpn four-layer-structure semiconductor device consisting of anode 1, n base 2, p base 3 and cathode 4, auxiliary gate 8 which is the same conductive type as p base 3 is so added that it may be joined to n base 2 and be separated from p base 3. Then, pn junction J4 between auxiliary gate 8 and n base 2 is biased reversely, and the lead current is flowed to pn junction J1 between anode 1 and n base 2 in the forward direction. Now, when deep level or resistance layer 9 is formed in the pn junction J4 part, much leak current is generated to shift the temperature dependence of the breakover voltage to the low temperature side. As a result, the off current is small, and the change rate of the breakover voltage to peripheral temperatures is large, and the switching temperature is lowered under the state where the off voltage rise rate is good.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP856478A JPS54101684A (en) | 1978-01-27 | 1978-01-27 | Semiconductor element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP856478A JPS54101684A (en) | 1978-01-27 | 1978-01-27 | Semiconductor element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54101684A true JPS54101684A (en) | 1979-08-10 |
Family
ID=11696561
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP856478A Pending JPS54101684A (en) | 1978-01-27 | 1978-01-27 | Semiconductor element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54101684A (en) |
-
1978
- 1978-01-27 JP JP856478A patent/JPS54101684A/en active Pending
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