JPS54101294A - Dummy mos semiconductor device - Google Patents

Dummy mos semiconductor device

Info

Publication number
JPS54101294A
JPS54101294A JP727978A JP727978A JPS54101294A JP S54101294 A JPS54101294 A JP S54101294A JP 727978 A JP727978 A JP 727978A JP 727978 A JP727978 A JP 727978A JP S54101294 A JPS54101294 A JP S54101294A
Authority
JP
Japan
Prior art keywords
gate
diffusion layer
substrate
mos element
dummy mos
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP727978A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6321341B2 (enrdf_load_stackoverflow
Inventor
Kazuo Yudasaka
Tatsu Ito
Tadayasu Nakajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP727978A priority Critical patent/JPS54101294A/ja
Publication of JPS54101294A publication Critical patent/JPS54101294A/ja
Publication of JPS6321341B2 publication Critical patent/JPS6321341B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP727978A 1978-01-27 1978-01-27 Dummy mos semiconductor device Granted JPS54101294A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP727978A JPS54101294A (en) 1978-01-27 1978-01-27 Dummy mos semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP727978A JPS54101294A (en) 1978-01-27 1978-01-27 Dummy mos semiconductor device

Publications (2)

Publication Number Publication Date
JPS54101294A true JPS54101294A (en) 1979-08-09
JPS6321341B2 JPS6321341B2 (enrdf_load_stackoverflow) 1988-05-06

Family

ID=11661580

Family Applications (1)

Application Number Title Priority Date Filing Date
JP727978A Granted JPS54101294A (en) 1978-01-27 1978-01-27 Dummy mos semiconductor device

Country Status (1)

Country Link
JP (1) JPS54101294A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60177640A (ja) * 1984-02-24 1985-09-11 Hitachi Ltd 半導体集積回路装置
US5497020A (en) * 1992-03-25 1996-03-05 Sony Corporation Charge drain for a MIS device
JP2006024601A (ja) * 2004-07-06 2006-01-26 Seiko Instruments Inc 電界効果型ｍｏｓトランジスタ

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02141025U (enrdf_load_stackoverflow) * 1989-04-25 1990-11-27

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60177640A (ja) * 1984-02-24 1985-09-11 Hitachi Ltd 半導体集積回路装置
US5497020A (en) * 1992-03-25 1996-03-05 Sony Corporation Charge drain for a MIS device
JP2006024601A (ja) * 2004-07-06 2006-01-26 Seiko Instruments Inc 電界効果型ｍｏｓトランジスタ

Also Published As

Publication number Publication date
JPS6321341B2 (enrdf_load_stackoverflow) 1988-05-06

Similar Documents

Publication Publication Date Title
JPS5457875A (en) Semiconductor nonvolatile memory device
JPS5681972A (en) Mos type field effect transistor
JPS5483386A (en) Semiconductor device
JPS55146956A (en) Semiconductor element having function for avoiding generation of soft error due to alpha ray
JPS54101294A (en) Dummy mos semiconductor device
JPS5240071A (en) Semiconductor device
JPS5559759A (en) Semiconductor device
JPS54156483A (en) Non-volatile semiconductor memory device
JPS5727069A (en) Mos type simiconductor device
JPS5591874A (en) V-groove structure mosfet
JPS57192069A (en) Insulated gate field effect semiconductor device
JPS5522879A (en) Insulation gate type field effect semiconductor device
JPS54139488A (en) Mos semiconductor element and its manufacture
JPS5718353A (en) Semiconductor device
JPS5615061A (en) Semiconductor memory device
JPS57121271A (en) Field effect transistor
JPS566466A (en) Charge pumping type memory cell
JPS566464A (en) Semiconductor device and manufacture thereof
JPS54109788A (en) Semiconductor integrated circuit device
JPS6428926A (en) Semiconductor device
JPS5561072A (en) Manufacture of diffusion matching type mis ic device
JPS56111257A (en) Preparation of insulated gate type semiconductor ic device
JPS56142672A (en) Semiconductor device and manufacture thereof
JPS5612779A (en) Zener diode
JPS5518072A (en) Mos semiconductor device