JPS5399775A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5399775A JPS5399775A JP1437077A JP1437077A JPS5399775A JP S5399775 A JPS5399775 A JP S5399775A JP 1437077 A JP1437077 A JP 1437077A JP 1437077 A JP1437077 A JP 1437077A JP S5399775 A JPS5399775 A JP S5399775A
- Authority
- JP
- Japan
- Prior art keywords
- manufacture
- semiconductor device
- fusing region
- recrystalization
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Bipolar Integrated Circuits (AREA)
Abstract
PURPOSE: To form a isolation layer via the Si recrystalization layer containing Al to be formed on the fusing region by the amount of the solid solution, by having a thermal treatment via a temperature slope provided on both surfaces of the Si substrate and removing the fusing region of Al-Si toward the rear surface.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1437077A JPS5399775A (en) | 1977-02-10 | 1977-02-10 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1437077A JPS5399775A (en) | 1977-02-10 | 1977-02-10 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5399775A true JPS5399775A (en) | 1978-08-31 |
Family
ID=11859150
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1437077A Pending JPS5399775A (en) | 1977-02-10 | 1977-02-10 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5399775A (en) |
-
1977
- 1977-02-10 JP JP1437077A patent/JPS5399775A/en active Pending
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