JPS5393784A - Transfer mask for x-ray exposure and its production - Google Patents

Transfer mask for x-ray exposure and its production

Info

Publication number
JPS5393784A
JPS5393784A JP853677A JP853677A JPS5393784A JP S5393784 A JPS5393784 A JP S5393784A JP 853677 A JP853677 A JP 853677A JP 853677 A JP853677 A JP 853677A JP S5393784 A JPS5393784 A JP S5393784A
Authority
JP
Japan
Prior art keywords
production
ray exposure
transfer mask
transfer patterns
exposure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP853677A
Other languages
Japanese (ja)
Other versions
JPS6210013B2 (en
Inventor
Yasuo Iida
Hidekazu Okabayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP853677A priority Critical patent/JPS5393784A/en
Publication of JPS5393784A publication Critical patent/JPS5393784A/en
Publication of JPS6210013B2 publication Critical patent/JPS6210013B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE: To reduce physical damages, attenuate secondary electrons at the time of exposure and obtain fine transfer patterns by coating a high molecular resin layer which causes curing and change of properties when radiated with ions, after forming an X-ray absorption layer having desired transfer patterns on the X-ray transmission layer.
COPYRIGHT: (C)1978,JPO&Japio
JP853677A 1977-01-27 1977-01-27 Transfer mask for x-ray exposure and its production Granted JPS5393784A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP853677A JPS5393784A (en) 1977-01-27 1977-01-27 Transfer mask for x-ray exposure and its production

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP853677A JPS5393784A (en) 1977-01-27 1977-01-27 Transfer mask for x-ray exposure and its production

Publications (2)

Publication Number Publication Date
JPS5393784A true JPS5393784A (en) 1978-08-17
JPS6210013B2 JPS6210013B2 (en) 1987-03-04

Family

ID=11695862

Family Applications (1)

Application Number Title Priority Date Filing Date
JP853677A Granted JPS5393784A (en) 1977-01-27 1977-01-27 Transfer mask for x-ray exposure and its production

Country Status (1)

Country Link
JP (1) JPS5393784A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017173810A (en) * 2016-03-16 2017-09-28 大日本印刷株式会社 Mask for charge particle beam exposure and manufacturing method therefor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017173810A (en) * 2016-03-16 2017-09-28 大日本印刷株式会社 Mask for charge particle beam exposure and manufacturing method therefor

Also Published As

Publication number Publication date
JPS6210013B2 (en) 1987-03-04

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