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Fujitsu Ltd
Original Assignee
Fujitsu Ltd
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Filing date
Publication date
Application filed by Fujitsu LtdfiledCriticalFujitsu Ltd
Priority to JP15866676ApriorityCriticalpatent/JPS5381068A/en
Publication of JPS5381068ApublicationCriticalpatent/JPS5381068A/en
PURPOSE: To produce a MOS element of high dielectric strength of gate oxide film by providing a getter layer through Ar+ ion implantation on the back of a substrate and leaving this till completion of the final high temperature treatment.
COPYRIGHT: (C)1978,JPO&Japio
JP15866676A1976-12-271976-12-27Production of semiconductor device
PendingJPS5381068A
(en)