JPS5380158A - Vapor phase growth for compound semiconductor - Google Patents
Vapor phase growth for compound semiconductorInfo
- Publication number
- JPS5380158A JPS5380158A JP15676776A JP15676776A JPS5380158A JP S5380158 A JPS5380158 A JP S5380158A JP 15676776 A JP15676776 A JP 15676776A JP 15676776 A JP15676776 A JP 15676776A JP S5380158 A JPS5380158 A JP S5380158A
- Authority
- JP
- Japan
- Prior art keywords
- compound semiconductor
- vapor phase
- phase growth
- gas
- substrate toward
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15676776A JPS5380158A (en) | 1976-12-25 | 1976-12-25 | Vapor phase growth for compound semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15676776A JPS5380158A (en) | 1976-12-25 | 1976-12-25 | Vapor phase growth for compound semiconductor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5380158A true JPS5380158A (en) | 1978-07-15 |
| JPS5514529B2 JPS5514529B2 (cs) | 1980-04-17 |
Family
ID=15634856
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15676776A Granted JPS5380158A (en) | 1976-12-25 | 1976-12-25 | Vapor phase growth for compound semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5380158A (cs) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6037860U (ja) * | 1983-08-22 | 1985-03-15 | 松下電器産業株式会社 | ガスセンサ |
| JPS61748A (ja) * | 1984-06-14 | 1986-01-06 | Mitsubishi Electric Corp | 悪臭ガス濃度計測装置 |
-
1976
- 1976-12-25 JP JP15676776A patent/JPS5380158A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5514529B2 (cs) | 1980-04-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| GB1497457A (en) | Semiconductor-liquid phase epitaxial growth method and semiconductor device manufactured using the same | |
| JPS5380158A (en) | Vapor phase growth for compound semiconductor | |
| JPS5423386A (en) | Manufacture of semiconductor device | |
| JPS5434676A (en) | Vapor growth method and apparatus for high-purity semiconductor layer | |
| JPS542300A (en) | Methdo and apparatus for vapor phase growth of magnespinel | |
| JPS5267260A (en) | Manufacture of iii-v group compounds semiconductor epitaxial laminatio n crystal | |
| JPS5372569A (en) | Vapor growing device | |
| JPS533062A (en) | Semiconductor crystal growth apparatus | |
| JPS551137A (en) | Gaseous phase epitaxial breeding of monocrystalline layer of gallium arsenate | |
| JPS52153374A (en) | Vapor phase growth method for compound semiconductor of groups iii-v | |
| JPS5376980A (en) | Gas phase growth method of compound semiconductor | |
| JPS52155189A (en) | Multiple layer crystal growth | |
| JPS5228864A (en) | Process for multilayer epitaxial growth | |
| JPS5334485A (en) | Manufacture for chemical compound semiconductor light emitting element | |
| JPS53116775A (en) | Vapor phase growth apparatus of semiconductor crystals | |
| JPS5251865A (en) | Vapor growth of group iii-v compound semiconductor crystal | |
| JPS5364466A (en) | Semiconductor crystal growth apparatus | |
| JPS5387985A (en) | Gaseous phase epitaxial growth method for compound semiconductor crystal | |
| JPS51146175A (en) | Diode epitaxial growth method | |
| JPS5249766A (en) | Apparatus for producing semiconductor crystal | |
| JPS5382263A (en) | Epitaxial growth method | |
| JPS52101698A (en) | Vapor phase growth of gallium arsenide | |
| JPS51114383A (en) | Liquid phase epitaxial crystal growth | |
| JPS5255471A (en) | Impurity doping method of gallium arsenide vapor growth crystal | |
| JPS52106271A (en) | Liquid-phase epitaxial growth method |