JPS5514529B2 - - Google Patents
Info
- Publication number
- JPS5514529B2 JPS5514529B2 JP15676776A JP15676776A JPS5514529B2 JP S5514529 B2 JPS5514529 B2 JP S5514529B2 JP 15676776 A JP15676776 A JP 15676776A JP 15676776 A JP15676776 A JP 15676776A JP S5514529 B2 JPS5514529 B2 JP S5514529B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15676776A JPS5380158A (en) | 1976-12-25 | 1976-12-25 | Vapor phase growth for compound semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15676776A JPS5380158A (en) | 1976-12-25 | 1976-12-25 | Vapor phase growth for compound semiconductor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5380158A JPS5380158A (en) | 1978-07-15 |
| JPS5514529B2 true JPS5514529B2 (cs) | 1980-04-17 |
Family
ID=15634856
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15676776A Granted JPS5380158A (en) | 1976-12-25 | 1976-12-25 | Vapor phase growth for compound semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5380158A (cs) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6037860U (ja) * | 1983-08-22 | 1985-03-15 | 松下電器産業株式会社 | ガスセンサ |
| JPS61748A (ja) * | 1984-06-14 | 1986-01-06 | Mitsubishi Electric Corp | 悪臭ガス濃度計測装置 |
-
1976
- 1976-12-25 JP JP15676776A patent/JPS5380158A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6037860U (ja) * | 1983-08-22 | 1985-03-15 | 松下電器産業株式会社 | ガスセンサ |
| JPS61748A (ja) * | 1984-06-14 | 1986-01-06 | Mitsubishi Electric Corp | 悪臭ガス濃度計測装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5380158A (en) | 1978-07-15 |