JPS5368642A - Plasma etching method - Google Patents

Plasma etching method

Info

Publication number
JPS5368642A
JPS5368642A JP14147677A JP14147677A JPS5368642A JP S5368642 A JPS5368642 A JP S5368642A JP 14147677 A JP14147677 A JP 14147677A JP 14147677 A JP14147677 A JP 14147677A JP S5368642 A JPS5368642 A JP S5368642A
Authority
JP
Japan
Prior art keywords
plasma etching
etching method
plasma
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14147677A
Other languages
Japanese (ja)
Inventor
Beru Guidoo
Hasuraa Barubaara
Uiruke Heruga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of JPS5368642A publication Critical patent/JPS5368642A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • H01L21/67109Apparatus for thermal treatment mainly by convection
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411Constructional aspects of the reactor
    • H01J37/3435Target holders (includes backing plates and endblocks)
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67063Apparatus for fluid treatment for etching
    • H01L21/67069Apparatus for fluid treatment for etching for drying etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
JP14147677A 1976-11-29 1977-11-25 Plasma etching method Pending JPS5368642A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19762654083 DE2654083A1 (en) 1976-11-29 1976-11-29 PLASMA ETCHING

Publications (1)

Publication Number Publication Date
JPS5368642A true JPS5368642A (en) 1978-06-19

Family

ID=5994209

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14147677A Pending JPS5368642A (en) 1976-11-29 1977-11-25 Plasma etching method

Country Status (5)

Country Link
JP (1) JPS5368642A (en)
BE (1) BE861311A (en)
DE (1) DE2654083A1 (en)
FR (1) FR2372571A1 (en)
IT (1) IT1089040B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6025233A (en) * 1983-07-22 1985-02-08 Fujitsu Ltd Vacuum process

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT386316B (en) * 1985-11-11 1988-08-10 Voest Alpine Ag Plasma reactor for etching printed circuit boards (printed equipment cards)
US4711197A (en) * 1986-10-16 1987-12-08 Thermco Systems, Inc. Gas scavenger

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6025233A (en) * 1983-07-22 1985-02-08 Fujitsu Ltd Vacuum process

Also Published As

Publication number Publication date
DE2654083A1 (en) 1978-06-01
FR2372571A1 (en) 1978-06-23
BE861311A (en) 1978-03-16
IT1089040B (en) 1985-06-10

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