JPS5355989A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5355989A JPS5355989A JP13004376A JP13004376A JPS5355989A JP S5355989 A JPS5355989 A JP S5355989A JP 13004376 A JP13004376 A JP 13004376A JP 13004376 A JP13004376 A JP 13004376A JP S5355989 A JPS5355989 A JP S5355989A
- Authority
- JP
- Japan
- Prior art keywords
- electric charge
- floating diffusion
- semiconductor device
- coupling element
- injection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 230000008878 coupling Effects 0.000 abstract 2
- 238000010168 coupling process Methods 0.000 abstract 2
- 238000005859 coupling reaction Methods 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 2
- 238000002347 injection Methods 0.000 abstract 2
- 239000007924 injection Substances 0.000 abstract 2
- 238000006243 chemical reaction Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
- H01L29/76866—Surface Channel CCD
- H01L29/76883—Three-Phase CCD
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Networks Using Active Elements (AREA)
Abstract
PURPOSE:To obtain an element which is suitably used for a photoelectric conversion element as well as an analong delay element structure, by providing a floating diffusion region containing a gate electrode for electric charge injection to the input side of an electric charge coupling element and having an automatic injection of he electric charge stored at the floating diffusion layer into the coupling element.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13004376A JPS5355989A (en) | 1976-10-30 | 1976-10-30 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13004376A JPS5355989A (en) | 1976-10-30 | 1976-10-30 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5355989A true JPS5355989A (en) | 1978-05-20 |
Family
ID=15024703
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13004376A Pending JPS5355989A (en) | 1976-10-30 | 1976-10-30 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5355989A (en) |
-
1976
- 1976-10-30 JP JP13004376A patent/JPS5355989A/en active Pending
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