JPS5353979A - Transistor - Google Patents

Transistor

Info

Publication number
JPS5353979A
JPS5353979A JP12892776A JP12892776A JPS5353979A JP S5353979 A JPS5353979 A JP S5353979A JP 12892776 A JP12892776 A JP 12892776A JP 12892776 A JP12892776 A JP 12892776A JP S5353979 A JPS5353979 A JP S5353979A
Authority
JP
Japan
Prior art keywords
region
emitter
emitter region
transistor
secindary
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12892776A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5724033B2 (enExample
Inventor
Yoshiaki Nawata
Masaaki Kobayashi
Kazuo Yajima
Shigeo Iwazawa
Koji Takahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP12892776A priority Critical patent/JPS5353979A/ja
Priority to US05/837,303 priority patent/US4157561A/en
Publication of JPS5353979A publication Critical patent/JPS5353979A/ja
Publication of JPS5724033B2 publication Critical patent/JPS5724033B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133—Emitter regions of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/231—Emitter or collector electrodes for bipolar transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/121—BJTs having built-in components
    • H10D84/125—BJTs having built-in components the built-in components being resistive elements, e.g. BJT having a built-in ballasting resistor

Landscapes

  • Bipolar Transistors (AREA)
JP12892776A 1976-10-27 1976-10-27 Transistor Granted JPS5353979A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP12892776A JPS5353979A (en) 1976-10-27 1976-10-27 Transistor
US05/837,303 US4157561A (en) 1976-10-27 1977-09-27 High power transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12892776A JPS5353979A (en) 1976-10-27 1976-10-27 Transistor

Publications (2)

Publication Number Publication Date
JPS5353979A true JPS5353979A (en) 1978-05-16
JPS5724033B2 JPS5724033B2 (enExample) 1982-05-21

Family

ID=14996820

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12892776A Granted JPS5353979A (en) 1976-10-27 1976-10-27 Transistor

Country Status (2)

Country Link
US (1) US4157561A (enExample)
JP (1) JPS5353979A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55134967A (en) * 1979-04-04 1980-10-21 Fairchild Camera Instr Co Composite base width transistor and method of fabricating same

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54120587A (en) * 1978-03-10 1979-09-19 Fujitsu Ltd Transistor
US4296336A (en) * 1979-01-22 1981-10-20 General Semiconductor Co., Inc. Switching circuit and method for avoiding secondary breakdown
US5736755A (en) * 1992-11-09 1998-04-07 Delco Electronics Corporation Vertical PNP power device with different ballastic resistant vertical PNP transistors
US5389552A (en) * 1993-01-29 1995-02-14 National Semiconductor Corporation Transistors having bases with different shape top surfaces
JP2000100826A (ja) * 1998-09-28 2000-04-07 Rohm Co Ltd パワートランジスタ及びそれを用いた半導体集積回路装置
US7196889B2 (en) * 2002-11-15 2007-03-27 Medtronic, Inc. Zener triggered overvoltage protection device
US20060076647A1 (en) * 2002-12-11 2006-04-13 Koninklijke Philips Electronics, N.V. Semiconductor component with a bipolar lateral power transistor
RU2229184C1 (ru) * 2003-01-22 2004-05-20 Воронежский государственный университет Мощная свч-транзисторная структура
RU2229183C1 (ru) * 2003-01-22 2004-05-20 Воронежский государственный университет Мощный биполярный вч- и свч-транзистор
RU2231865C1 (ru) * 2003-01-22 2004-06-27 Воронежский государственный университет Мощная вч и свч биполярная транзисторная структура

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49106777A (enExample) * 1973-02-09 1974-10-09

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3997910A (en) * 1975-02-26 1976-12-14 Rca Corporation Semiconductor device with solder conductive paths

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49106777A (enExample) * 1973-02-09 1974-10-09

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55134967A (en) * 1979-04-04 1980-10-21 Fairchild Camera Instr Co Composite base width transistor and method of fabricating same

Also Published As

Publication number Publication date
US4157561A (en) 1979-06-05
JPS5724033B2 (enExample) 1982-05-21

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