JPS5724033B2 - - Google Patents
Info
- Publication number
- JPS5724033B2 JPS5724033B2 JP12892776A JP12892776A JPS5724033B2 JP S5724033 B2 JPS5724033 B2 JP S5724033B2 JP 12892776 A JP12892776 A JP 12892776A JP 12892776 A JP12892776 A JP 12892776A JP S5724033 B2 JPS5724033 B2 JP S5724033B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/133—Emitter regions of BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
- H10D64/231—Emitter or collector electrodes for bipolar transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
- H10D84/121—BJTs having built-in components
- H10D84/125—BJTs having built-in components the built-in components being resistive elements, e.g. BJT having a built-in ballasting resistor
Landscapes
- Bipolar Transistors (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12892776A JPS5353979A (en) | 1976-10-27 | 1976-10-27 | Transistor |
| US05/837,303 US4157561A (en) | 1976-10-27 | 1977-09-27 | High power transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12892776A JPS5353979A (en) | 1976-10-27 | 1976-10-27 | Transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5353979A JPS5353979A (en) | 1978-05-16 |
| JPS5724033B2 true JPS5724033B2 (enExample) | 1982-05-21 |
Family
ID=14996820
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12892776A Granted JPS5353979A (en) | 1976-10-27 | 1976-10-27 | Transistor |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US4157561A (enExample) |
| JP (1) | JPS5353979A (enExample) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54120587A (en) * | 1978-03-10 | 1979-09-19 | Fujitsu Ltd | Transistor |
| US4296336A (en) * | 1979-01-22 | 1981-10-20 | General Semiconductor Co., Inc. | Switching circuit and method for avoiding secondary breakdown |
| JPS55134967A (en) * | 1979-04-04 | 1980-10-21 | Fairchild Camera Instr Co | Composite base width transistor and method of fabricating same |
| US5736755A (en) * | 1992-11-09 | 1998-04-07 | Delco Electronics Corporation | Vertical PNP power device with different ballastic resistant vertical PNP transistors |
| US5389552A (en) * | 1993-01-29 | 1995-02-14 | National Semiconductor Corporation | Transistors having bases with different shape top surfaces |
| JP2000100826A (ja) * | 1998-09-28 | 2000-04-07 | Rohm Co Ltd | パワートランジスタ及びそれを用いた半導体集積回路装置 |
| US7196889B2 (en) * | 2002-11-15 | 2007-03-27 | Medtronic, Inc. | Zener triggered overvoltage protection device |
| US20060076647A1 (en) * | 2002-12-11 | 2006-04-13 | Koninklijke Philips Electronics, N.V. | Semiconductor component with a bipolar lateral power transistor |
| RU2229184C1 (ru) * | 2003-01-22 | 2004-05-20 | Воронежский государственный университет | Мощная свч-транзисторная структура |
| RU2229183C1 (ru) * | 2003-01-22 | 2004-05-20 | Воронежский государственный университет | Мощный биполярный вч- и свч-транзистор |
| RU2231865C1 (ru) * | 2003-01-22 | 2004-06-27 | Воронежский государственный университет | Мощная вч и свч биполярная транзисторная структура |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5311354B2 (enExample) * | 1973-02-09 | 1978-04-20 | ||
| US3997910A (en) * | 1975-02-26 | 1976-12-14 | Rca Corporation | Semiconductor device with solder conductive paths |
-
1976
- 1976-10-27 JP JP12892776A patent/JPS5353979A/ja active Granted
-
1977
- 1977-09-27 US US05/837,303 patent/US4157561A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US4157561A (en) | 1979-06-05 |
| JPS5353979A (en) | 1978-05-16 |