JPS5349942A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5349942A JPS5349942A JP12381476A JP12381476A JPS5349942A JP S5349942 A JPS5349942 A JP S5349942A JP 12381476 A JP12381476 A JP 12381476A JP 12381476 A JP12381476 A JP 12381476A JP S5349942 A JPS5349942 A JP S5349942A
- Authority
- JP
- Japan
- Prior art keywords
- manufacture
- semiconductor device
- impurities
- spike
- evaporation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Thyristors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12381476A JPS5349942A (en) | 1976-10-18 | 1976-10-18 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12381476A JPS5349942A (en) | 1976-10-18 | 1976-10-18 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5349942A true JPS5349942A (en) | 1978-05-06 |
Family
ID=14869988
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12381476A Pending JPS5349942A (en) | 1976-10-18 | 1976-10-18 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5349942A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5180690A (en) * | 1988-12-14 | 1993-01-19 | Energy Conversion Devices, Inc. | Method of forming a layer of doped crystalline semiconductor alloy material |
-
1976
- 1976-10-18 JP JP12381476A patent/JPS5349942A/ja active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5180690A (en) * | 1988-12-14 | 1993-01-19 | Energy Conversion Devices, Inc. | Method of forming a layer of doped crystalline semiconductor alloy material |
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