JPS5341968A - Semiconductor circuit - Google Patents

Semiconductor circuit

Info

Publication number
JPS5341968A
JPS5341968A JP11585276A JP11585276A JPS5341968A JP S5341968 A JPS5341968 A JP S5341968A JP 11585276 A JP11585276 A JP 11585276A JP 11585276 A JP11585276 A JP 11585276A JP S5341968 A JPS5341968 A JP S5341968A
Authority
JP
Japan
Prior art keywords
semiconductor circuit
memory circuit
time
accross
shortening
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11585276A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5712234B2 (US20030204162A1-20031030-M00001.png
Inventor
Noriyuki Honma
Kunihiko Yamaguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP11585276A priority Critical patent/JPS5341968A/ja
Priority to US05/836,969 priority patent/US4156941A/en
Priority to NLAANVRAGE7710688,A priority patent/NL178729C/xx
Priority to DE2743955A priority patent/DE2743955C3/de
Publication of JPS5341968A publication Critical patent/JPS5341968A/ja
Publication of JPS5712234B2 publication Critical patent/JPS5712234B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/414—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
    • G11C11/416—Read-write [R-W] circuits 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/414—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
    • G11C11/415—Address circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Electronic Switches (AREA)
JP11585276A 1976-09-29 1976-09-29 Semiconductor circuit Granted JPS5341968A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP11585276A JPS5341968A (en) 1976-09-29 1976-09-29 Semiconductor circuit
US05/836,969 US4156941A (en) 1976-09-29 1977-09-27 High speed semiconductor memory
NLAANVRAGE7710688,A NL178729C (nl) 1976-09-29 1977-09-29 Halfgeleidergeheugen.
DE2743955A DE2743955C3 (de) 1976-09-29 1977-09-29 Halbleiterspeicher

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11585276A JPS5341968A (en) 1976-09-29 1976-09-29 Semiconductor circuit

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP59010094A Division JPS59188884A (ja) 1984-01-25 1984-01-25 半導体回路

Publications (2)

Publication Number Publication Date
JPS5341968A true JPS5341968A (en) 1978-04-15
JPS5712234B2 JPS5712234B2 (US20030204162A1-20031030-M00001.png) 1982-03-09

Family

ID=14672724

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11585276A Granted JPS5341968A (en) 1976-09-29 1976-09-29 Semiconductor circuit

Country Status (4)

Country Link
US (1) US4156941A (US20030204162A1-20031030-M00001.png)
JP (1) JPS5341968A (US20030204162A1-20031030-M00001.png)
DE (1) DE2743955C3 (US20030204162A1-20031030-M00001.png)
NL (1) NL178729C (US20030204162A1-20031030-M00001.png)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54142030A (en) * 1978-04-27 1979-11-05 Nec Corp Semiconductor memory unit
JPS58128088A (ja) * 1982-01-18 1983-07-30 フエアチアイルド・カメラ・アンド・インストルメント・コ−ポレ−シヨン バイポ−ラ・ランダムアクセスメモリ用の電流ダンプ回路
US4520462A (en) * 1981-12-18 1985-05-28 Fujitsu Limited Semiconductor memory device

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5833634B2 (ja) * 1979-02-28 1983-07-21 富士通株式会社 メモリセルアレイの駆動方式
DE2929384C2 (de) * 1979-07-20 1981-07-30 Ibm Deutschland Gmbh, 7000 Stuttgart Nachladeschaltung für einen Halbleiterspeicher
JPS5831673B2 (ja) * 1979-08-22 1983-07-07 富士通株式会社 半導体記憶装置
JPS5637884A (en) * 1979-08-30 1981-04-11 Fujitsu Ltd Terminating circuit for word selective signal line of semiconductor memory unit
EP0030422B1 (en) * 1979-11-28 1987-05-27 Fujitsu Limited Semiconductor memory circuit device
JPS5831674B2 (ja) * 1979-12-19 1983-07-07 株式会社日立製作所 メモリ
DE3004565C2 (de) * 1980-02-07 1984-06-14 Siemens AG, 1000 Berlin und 8000 München Integrierte digitale Halbleiterschaltung
US4357687A (en) * 1980-12-11 1982-11-02 Fairchild Camera And Instr. Corp. Adaptive word line pull down
JPS5841597B2 (ja) * 1980-12-24 1983-09-13 富士通株式会社 半導体メモリディスチャ−ジ回路
US4413191A (en) * 1981-05-05 1983-11-01 International Business Machines Corporation Array word line driver system
US4393476A (en) * 1981-07-13 1983-07-12 Fairchild Camera & Instrument Corp. Random access memory dual word line recovery circuitry
US4488268A (en) * 1981-09-29 1984-12-11 Fujitsu Limited Semiconductor memory
JPS58147882A (ja) * 1982-02-27 1983-09-02 Fujitsu Ltd 半導体記憶装置のワ−ド線放電回路
DE3380543D1 (en) * 1982-07-02 1989-10-12 Fujitsu Ltd Semiconductor memory devices with word line discharging circuits
JPS5961842U (ja) * 1982-10-19 1984-04-23 セイレイ工業株式会社 穀粒選別装置
US4570240A (en) * 1983-12-29 1986-02-11 Motorola, Inc. AC Transient driver for memory cells
US4694429A (en) * 1984-11-29 1987-09-15 Kabushiki Kaisha Toshiba Semiconductor memory device
US5278795A (en) * 1987-03-27 1994-01-11 U.S. Philips Corporation Memory circuit having a line decoder with a Darlington-type switching stage and a discharge current source
JPH05205483A (ja) * 1992-01-23 1993-08-13 Sony Corp バイポーラｒａｍ回路
US5864507A (en) * 1996-12-18 1999-01-26 Cypress Semiconductor Corporation Dual level wordline clamp for reduced memory cell current
US8072834B2 (en) * 2005-08-25 2011-12-06 Cypress Semiconductor Corporation Line driver circuit and method with standby mode of operation

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3838404A (en) * 1973-05-17 1974-09-24 Teletype Corp Random access memory system and cell
GB1456608A (en) * 1973-08-23 1976-11-24 Ibm Read only memory
US3893087A (en) * 1974-02-08 1975-07-01 Gen Instrument Corp Random access memory with shared column conductors
DE2430784B2 (de) * 1974-06-26 1977-02-10 Siemens AG, 1000 Berlin und 8000 München Bipolarer halbleiterspeicher

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54142030A (en) * 1978-04-27 1979-11-05 Nec Corp Semiconductor memory unit
JPS6051192B2 (ja) * 1978-04-27 1985-11-12 日本電気株式会社 半導体記憶装置
US4520462A (en) * 1981-12-18 1985-05-28 Fujitsu Limited Semiconductor memory device
JPS58128088A (ja) * 1982-01-18 1983-07-30 フエアチアイルド・カメラ・アンド・インストルメント・コ−ポレ−シヨン バイポ−ラ・ランダムアクセスメモリ用の電流ダンプ回路

Also Published As

Publication number Publication date
DE2743955B2 (de) 1979-01-25
NL7710688A (nl) 1978-03-31
DE2743955C3 (de) 1985-11-14
DE2743955A1 (de) 1978-03-30
NL178729B (nl) 1985-12-02
JPS5712234B2 (US20030204162A1-20031030-M00001.png) 1982-03-09
NL178729C (nl) 1986-05-01
US4156941A (en) 1979-05-29

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