JPS5341190A - Method of improving adhesion to polyimide layer of metallic layer - Google Patents

Method of improving adhesion to polyimide layer of metallic layer

Info

Publication number
JPS5341190A
JPS5341190A JP8616977A JP8616977A JPS5341190A JP S5341190 A JPS5341190 A JP S5341190A JP 8616977 A JP8616977 A JP 8616977A JP 8616977 A JP8616977 A JP 8616977A JP S5341190 A JPS5341190 A JP S5341190A
Authority
JP
Japan
Prior art keywords
layer
improving adhesion
polyimide
metallic layer
metallic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8616977A
Other languages
English (en)
Japanese (ja)
Inventor
Bauru Deiitaa
Furoshiyu Peetaa
Kaanitsuku Buirufuriito
Shiyuwaato Furiidoritsuhi
Suiiran Aashiyura
Fuoukutoman Seodooru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS5341190A publication Critical patent/JPS5341190A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02304—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment formation of intermediate layers, e.g. buffer layers, layers to improve adhesion, lattice match or diffusion barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/32051—Deposition of metallic or metal-silicide layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
    • H01L21/76828—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. thermal treatment
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0313—Organic insulating material
    • H05K1/032—Organic insulating material consisting of one material
    • H05K1/0346—Organic insulating material consisting of one material containing N
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/38—Improvement of the adhesion between the insulating substrate and the metal

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Manufacture Of Macromolecular Shaped Articles (AREA)
  • Laminated Bodies (AREA)
  • Physical Vapour Deposition (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Manufacturing Of Printed Wiring (AREA)
JP8616977A 1976-08-27 1977-07-20 Method of improving adhesion to polyimide layer of metallic layer Pending JPS5341190A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2638799A DE2638799C3 (de) 1976-08-27 1976-08-27 Verfahren zur Verbesserung der Haftung von metallischen Leiterzügen auf Polyimidschichten in integrierten Schaltungen

Publications (1)

Publication Number Publication Date
JPS5341190A true JPS5341190A (en) 1978-04-14

Family

ID=5986587

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8616977A Pending JPS5341190A (en) 1976-08-27 1977-07-20 Method of improving adhesion to polyimide layer of metallic layer

Country Status (4)

Country Link
US (1) US4152195A (cg-RX-API-DMAC7.html)
JP (1) JPS5341190A (cg-RX-API-DMAC7.html)
DE (1) DE2638799C3 (cg-RX-API-DMAC7.html)
FR (1) FR2363192A1 (cg-RX-API-DMAC7.html)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57139996A (en) * 1981-02-24 1982-08-30 Nippon Electric Co Hybrid multilayer circuit board
JPS57188897A (en) * 1981-05-15 1982-11-19 Nippon Electric Co Multilayer circuit board
JPS57188896A (en) * 1981-05-15 1982-11-19 Nippon Electric Co Multilayer circuit board
JPS57193051A (en) * 1981-05-25 1982-11-27 Nec Corp Multilayer circuit board
JPS57201098A (en) * 1981-06-04 1982-12-09 Nippon Electric Co Integrated circuit mounting unit
JPS61168679U (cg-RX-API-DMAC7.html) * 1985-04-09 1986-10-20
JPS63289840A (ja) * 1987-05-21 1988-11-28 Nec Corp 半導体装置の製造方法

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5850417B2 (ja) * 1979-07-31 1983-11-10 富士通株式会社 半導体装置の製造方法
US4356629A (en) * 1980-04-21 1982-11-02 Exploration Logging, Inc. Method of making well logging apparatus
US4494072A (en) * 1980-04-21 1985-01-15 Exploration Logging, Inc. Well logging apparatus with replaceable sensor carrying insulating sleeve disposed in rotation restrained position around a drill string
US4307179A (en) * 1980-07-03 1981-12-22 International Business Machines Corporation Planar metal interconnection system and process
JPS57154857A (en) * 1981-03-20 1982-09-24 Hitachi Ltd Semiconductor integrated circuit device
US4423547A (en) * 1981-06-01 1984-01-03 International Business Machines Corporation Method for forming dense multilevel interconnection metallurgy for semiconductor devices
US4353778A (en) * 1981-09-04 1982-10-12 International Business Machines Corporation Method of etching polyimide
GB2119521B (en) * 1981-10-01 1986-02-05 Exploration Logging Inc Well logging apparatus and method for making same
US4401686A (en) * 1982-02-08 1983-08-30 Raymond Iannetta Printed circuit and method of forming same
US4656314A (en) * 1982-02-08 1987-04-07 Industrial Science Associates Printed circuit
US4604799A (en) * 1982-09-03 1986-08-12 John Fluke Mfg. Co., Inc. Method of making molded circuit board
FR2545535B1 (fr) * 1983-05-06 1988-04-08 Geoservices Dispositif pour transmettre en surface les signaux d'un emetteur situe a grande profondeur
US4451326A (en) * 1983-09-07 1984-05-29 Advanced Micro Devices, Inc. Method for interconnecting metallic layers
US4720401A (en) * 1985-01-11 1988-01-19 International Business Machines Corporation Enhanced adhesion between metals and polymers
US4908094A (en) * 1986-04-14 1990-03-13 International Business Machines Corporation Method for laminating organic materials via surface modification
US4711791A (en) * 1986-08-04 1987-12-08 The Boc Group, Inc. Method of making a flexible microcircuit
US4827326A (en) * 1987-11-02 1989-05-02 Motorola, Inc. Integrated circuit having polyimide/metal passivation layer and method of manufacture using metal lift-off
US5104734A (en) * 1988-06-03 1992-04-14 International Business Machines Corporation Method for improving adhesion between a polyimide layer and a metal and the article obtained
US4975327A (en) 1989-07-11 1990-12-04 Minnesota Mining And Manufacturing Company Polyimide substrate having a textured surface and metallizing such a substrate
US5137751A (en) * 1990-03-09 1992-08-11 Amoco Corporation Process for making thick multilayers of polyimide
EP0527926B1 (en) * 1990-05-04 1997-08-13 Battelle Memorial Institute Process for depositing thin film layers onto surfaces modified with organic functional groups
US5114754A (en) * 1991-01-14 1992-05-19 International Business Machines Corporation Passivation of metal in metal/polyimide structures
US5194928A (en) * 1991-01-14 1993-03-16 International Business Machines Corporation Passivation of metal in metal/polyimide structure
US5183692A (en) * 1991-07-01 1993-02-02 Motorola, Inc. Polyimide coating having electroless metal plate
US5397741A (en) * 1993-03-29 1995-03-14 International Business Machines Corporation Process for metallized vias in polyimide
US6099939A (en) * 1995-04-13 2000-08-08 International Business Machines Corporation Enhanced adhesion between a vapor deposited metal and an organic polymer surface exhibiting tailored morphology
JPH0948864A (ja) * 1995-08-03 1997-02-18 Kanegafuchi Chem Ind Co Ltd ポリイミドフィルムの接着性改善方法及び接着性を改善したポリイミドフィルム
US6171714B1 (en) 1996-04-18 2001-01-09 Gould Electronics Inc. Adhesiveless flexible laminate and process for making adhesiveless flexible laminate
US6141870A (en) 1997-08-04 2000-11-07 Peter K. Trzyna Method for making electrical device
US6355304B1 (en) 1998-06-02 2002-03-12 Summit Coating Technologies, Llc. Adhesion promotion
US6965165B2 (en) * 1998-12-21 2005-11-15 Mou-Shiung Lin Top layers of metal for high performance IC's
CN100397959C (zh) * 2003-05-06 2008-06-25 三菱瓦斯化学株式会社 贴金属层合物
KR20100134631A (ko) * 2008-03-14 2010-12-23 다우 코닝 코포레이션 광전지 모듈 형성 방법

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3179634A (en) * 1962-01-26 1965-04-20 Du Pont Aromatic polyimides and the process for preparing them
GB1230421A (cg-RX-API-DMAC7.html) * 1967-09-15 1971-05-05
JPS4835778A (cg-RX-API-DMAC7.html) * 1971-09-09 1973-05-26
US3820994A (en) * 1972-06-07 1974-06-28 Westinghouse Electric Corp Penetration of polyimide films
DE2342801C3 (de) * 1973-08-24 1979-10-04 Ibm Deutschland Gmbh, 7000 Stuttgart Verfahren zum Beschichten von oxidierten, anorganischen Substraten mit Polyimid
JPS5173570A (ja) * 1974-12-23 1976-06-25 Kyoshi Okabayashi Purasuchitsukukizaimenjoheno kagakudometsukino mitsuchakukashorihoho
US3976810A (en) * 1975-02-26 1976-08-24 E. I. Du Pont De Nemours And Company Process for anion removal from orthophosphate coatings

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57139996A (en) * 1981-02-24 1982-08-30 Nippon Electric Co Hybrid multilayer circuit board
JPS57188897A (en) * 1981-05-15 1982-11-19 Nippon Electric Co Multilayer circuit board
JPS57188896A (en) * 1981-05-15 1982-11-19 Nippon Electric Co Multilayer circuit board
JPS57193051A (en) * 1981-05-25 1982-11-27 Nec Corp Multilayer circuit board
JPS57201098A (en) * 1981-06-04 1982-12-09 Nippon Electric Co Integrated circuit mounting unit
JPS61168679U (cg-RX-API-DMAC7.html) * 1985-04-09 1986-10-20
JPS63289840A (ja) * 1987-05-21 1988-11-28 Nec Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
DE2638799A1 (de) 1978-03-02
FR2363192A1 (fr) 1978-03-24
DE2638799B2 (de) 1980-10-23
DE2638799C3 (de) 1981-12-03
FR2363192B1 (cg-RX-API-DMAC7.html) 1980-02-08
US4152195A (en) 1979-05-01

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