JPS533902A - Production of silicon crystal membrane - Google Patents

Production of silicon crystal membrane

Info

Publication number
JPS533902A
JPS533902A JP7703176A JP7703176A JPS533902A JP S533902 A JPS533902 A JP S533902A JP 7703176 A JP7703176 A JP 7703176A JP 7703176 A JP7703176 A JP 7703176A JP S533902 A JPS533902 A JP S533902A
Authority
JP
Japan
Prior art keywords
silicon crystal
production
crystal membrane
membrane
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7703176A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5617312B2 (Direct
Inventor
Haruo Ito
Tadashi Saito
Shigekazu Minagawa
Takashi Tokuyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP7703176A priority Critical patent/JPS533902A/ja
Publication of JPS533902A publication Critical patent/JPS533902A/ja
Publication of JPS5617312B2 publication Critical patent/JPS5617312B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP7703176A 1976-07-01 1976-07-01 Production of silicon crystal membrane Granted JPS533902A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7703176A JPS533902A (en) 1976-07-01 1976-07-01 Production of silicon crystal membrane

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7703176A JPS533902A (en) 1976-07-01 1976-07-01 Production of silicon crystal membrane

Publications (2)

Publication Number Publication Date
JPS533902A true JPS533902A (en) 1978-01-14
JPS5617312B2 JPS5617312B2 (Direct) 1981-04-21

Family

ID=13622371

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7703176A Granted JPS533902A (en) 1976-07-01 1976-07-01 Production of silicon crystal membrane

Country Status (1)

Country Link
JP (1) JPS533902A (Direct)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59163711A (ja) * 1983-03-07 1984-09-14 三菱電機株式会社 多芯超電導ケ−ブル
JPH01207906A (ja) * 1988-02-15 1989-08-21 Kansai Electric Power Co Inc:The 超電導巻線

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59163711A (ja) * 1983-03-07 1984-09-14 三菱電機株式会社 多芯超電導ケ−ブル
JPH01207906A (ja) * 1988-02-15 1989-08-21 Kansai Electric Power Co Inc:The 超電導巻線

Also Published As

Publication number Publication date
JPS5617312B2 (Direct) 1981-04-21

Similar Documents

Publication Publication Date Title
JPS5320767A (en) X-ray mask supporting underlayer and its production
JPS533902A (en) Production of silicon crystal membrane
JPS5247673A (en) Process for production of silicon crystal film
JPS53146299A (en) Production of silicon carbide substrate
JPS5386571A (en) Production of self-alignment type crystal
JPS533903A (en) Production of silicon crystal membrane
JPS5288590A (en) Apparatus for manufacturing single crystal
JPS52155189A (en) Multiple layer crystal growth
JPS5336180A (en) Production of semiconductor device
JPS5413475A (en) Preparation of single crystal
JPS5351964A (en) Selective growth method for semiconductor crystal
JPS52106673A (en) Crystal growing method and device thereof
JPS51134936A (en) Solar-heat selective absorption plate and production of same
JPS5275276A (en) Production of semiconductor device
JPS5348459A (en) Production of semiconductor device
JPS5252981A (en) Process for producing bases for chemical plating
JPS5231665A (en) Growing method of semiconductor crystal
JPS53143166A (en) Production and producing apparatus of semiconductor epitaxial layer
JPS52135264A (en) Liquid phase epitaxial growth method
JPS5421861A (en) Production of liquid crystal elements
JPS5337594A (en) Production of active carbon
JPS5371689A (en) Manufacturing apparatus for band type silicon crystal
JPS51146380A (en) A crucible for raising of single crystal
JPS5270752A (en) Manufacture of semiconductor device
JPS533973A (en) Production of ribbon shaped crystal