JPS5335479A - Semiconductor unit - Google Patents

Semiconductor unit

Info

Publication number
JPS5335479A
JPS5335479A JP10947976A JP10947976A JPS5335479A JP S5335479 A JPS5335479 A JP S5335479A JP 10947976 A JP10947976 A JP 10947976A JP 10947976 A JP10947976 A JP 10947976A JP S5335479 A JPS5335479 A JP S5335479A
Authority
JP
Japan
Prior art keywords
gate
width
semiconductor unit
methode
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10947976A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5519068B2 (enExample
Inventor
Shigeru Nishimatsu
Yoshifumi Kawamoto
Nobuo Hasegawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP10947976A priority Critical patent/JPS5335479A/ja
Publication of JPS5335479A publication Critical patent/JPS5335479A/ja
Publication of JPS5519068B2 publication Critical patent/JPS5519068B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP10947976A 1976-09-14 1976-09-14 Semiconductor unit Granted JPS5335479A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10947976A JPS5335479A (en) 1976-09-14 1976-09-14 Semiconductor unit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10947976A JPS5335479A (en) 1976-09-14 1976-09-14 Semiconductor unit

Publications (2)

Publication Number Publication Date
JPS5335479A true JPS5335479A (en) 1978-04-01
JPS5519068B2 JPS5519068B2 (enExample) 1980-05-23

Family

ID=14511275

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10947976A Granted JPS5335479A (en) 1976-09-14 1976-09-14 Semiconductor unit

Country Status (1)

Country Link
JP (1) JPS5335479A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5683976A (en) * 1979-12-12 1981-07-08 Toshiba Corp Semiconductor device and manufacture
JPS61125175A (ja) * 1984-11-22 1986-06-12 Nec Corp Ｍｉｓ型半導体集積回路装置及びその製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5683976A (en) * 1979-12-12 1981-07-08 Toshiba Corp Semiconductor device and manufacture
JPS61125175A (ja) * 1984-11-22 1986-06-12 Nec Corp Ｍｉｓ型半導体集積回路装置及びその製造方法

Also Published As

Publication number Publication date
JPS5519068B2 (enExample) 1980-05-23

Similar Documents

Publication Publication Date Title
JPS5226177A (en) Semi-conductor unit
JPS5335479A (en) Semiconductor unit
JPS53112069A (en) Production of mis transistor
JPS5310982A (en) Production of mis semiconductor device
JPS539479A (en) Production of field effect transistors
JPS5215274A (en) Semiconductor device
JPS5296871A (en) Manufacture of mos type transistor
JPS5242080A (en) Micro channel type insulated gate field effect transistor and process for productin thereof
JPS52128084A (en) Manufacture of semiconductor ic unit
JPS5366179A (en) Semiconductor device
JPS5435684A (en) Junction type field effect transistor
JPS548986A (en) Semiconductor device
JPS5286779A (en) Semiconductor device
JPS52146186A (en) Semiconductor device
JPS5372470A (en) Semiconductor device
JPS5310980A (en) Production of field effect transistor
JPS5317284A (en) Production of semiconductor device
JPS52144980A (en) Sos semiconductor device
JPS53144276A (en) Junction-type field effect transistor
JPS53130986A (en) Semiconductor device and its manufacture
JPS52130572A (en) Preparation of mis type semiconductor circuit device
JPS5312278A (en) Production of mos type semiconductor device
JPS53100779A (en) Production of insulated gate type semiconductor device
JPS52155979A (en) Semiconductor device
JPS52127078A (en) Semiconductor device